UPD464618ALS1-A6 datasheet, PDF

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UPD464618ALS1-A6: DescriptionLate-Write SRAM, 256KX18, 3ns, BICMOS, PBGA119, PLASTIC, BGA-119; Categorystorage storage; File Size192KB，28 Pages; ManufacturerNEC Electronics

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UPD464618ALS1-A6 Overview

Late-Write SRAM, 256KX18, 3ns, BICMOS, PBGA119, PLASTIC, BGA-119

UPD464618ALS1-A6 Parametric

Parameter Name	Attribute value
Maker	NEC Electronics
Parts packaging code	BGA
package instruction	BGA,
Contacts	119
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	3 ns
JESD-30 code	R-PBGA-B119
length	22 mm
memory density	4718592 bit
Memory IC Type	LATE-WRITE SRAM
memory width	18
Number of functions	1
Number of terminals	119
word count	262144 words
character code	256000
Operating mode	SYNCHRONOUS
organize	256KX18
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	2.3 mm
Maximum supply voltage (Vsup)	3.45 V
Minimum supply voltage (Vsup)	3.15 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	BICMOS
Terminal form	BALL
Terminal pitch	1.27 mm
Terminal location	BOTTOM
width	14 mm

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DATA SHEET

PD464618AL, 464636AL

4M-BIT Bi-CMOS SYNCHRONOUS FAST STATIC RAM

256K-WORD BY 18-BIT / 128K-WORD BY 36-BIT

LVTTL INTERFACE/REGISTER-REGISTER/LATE WRITE

MOS INTEGRATED CIRCUIT

Description

The

PD464618AL is a 262,144 words by 18 bits, and the

PD464636AL is a 131,072 words by 36 bits

synchronous static RAM fabricated with advanced Bi-CMOS technology using N-channel memory cell.

This technology and unique peripheral circuits make the

PD464618AL and

PD464636AL a high-speed device.

The

PD464618AL and

PD464636AL are suitable for applications which require high-speed, low voltage, high-

density memory and wide bit configuration, such as cache and buffer memory.

These are packaged in a 119-pin plastic BGA (Ball Grid Array).

Features

•

LVTTL 3.3 V Input / Output levels

•

Fast clock access time : 2.5 ns / 200 MHz, 3.0 ns / 166 MHz, 3.5 ns / 143 MHz

•

Asynchronous output enable control : /G

•

Single differential clock inputs

•

Byte write control : /SBa (DQa1-9), /SBb (DQb1-9), /SBc (DQc1-9), /SBd (DQd1-9)

•

Common I/O using three-state outputs

•

Internally self-timed write cycle

•

Late write with 1 dead cycle between Read-Write

•

Boundary scan (JTAG) IEEE 1149.1 compatible

•

Single +3.3 V power supply

•

Sleep mode : ZZ(Enables sleep mode, active high)

Ordering Information

Part number

Access time

2.5 ns

3.0 ns

3.5 ns

2.5 ns

3.0 ns

3.5 ns

Clock frequency

200 MHz

166 MHz

143 MHz

200 MHz

166 MHz

143 MHz

Package

119-pin plastic BGA

PD464618ALS1-A5

PD464618ALS1-A6

PD464618ALS1-A7

PD464636ALS1-A5

PD464636ALS1-A6

PD464636ALS1-A7

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M14101EJ2V0DS00 (2nd edition)

Date Published May 1999 NS CP(K)

Printed in Japan

The mark

•

shows major revised points.

1999

UPD464618ALS1-A6 Related Products

	UPD464618ALS1-A6	UPD464618ALS1-A5	UPD464636ALS1-A5	UPD464636ALS1-A7	UPD464636ALS1-A6
Description	Late-Write SRAM, 256KX18, 3ns, BICMOS, PBGA119, PLASTIC, BGA-119	Late-Write SRAM, 256KX18, 2.5ns, BICMOS, PBGA119, PLASTIC, BGA-119	Late-Write SRAM, 128KX36, 2.5ns, BICMOS, PBGA119, PLASTIC, BGA-119	Late-Write SRAM, 128KX36, 3.5ns, BICMOS, PBGA119, PLASTIC, BGA-119	Late-Write SRAM, 128KX36, 3ns, BICMOS, PBGA119, PLASTIC, BGA-119
Parts packaging code	BGA	BGA	BGA	BGA	BGA
package instruction	BGA,	BGA,	BGA,	BGA,	BGA,
Contacts	119	119	119	119	119
Reach Compliance Code	unknown	unknown	unknown	unknow	unknown
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maker	NEC Electronics	-	-	NEC Electronics	NEC Electronics
Maximum access time	3 ns	-	2.5 ns	3.5 ns	3 ns
JESD-30 code	R-PBGA-B119	-	R-PBGA-B119	R-PBGA-B119	R-PBGA-B119
length	22 mm	-	22 mm	22 mm	22 mm
memory density	4718592 bit	-	4718592 bit	4718592 bi	4718592 bit
Memory IC Type	LATE-WRITE SRAM	-	LATE-WRITE SRAM	LATE-WRITE SRAM	LATE-WRITE SRAM
memory width	18	-	36	36	36
Number of functions	1	-	1	1	1
Number of terminals	119	-	119	119	119
word count	262144 words	-	131072 words	131072 words	131072 words
character code	256000	-	128000	128000	128000
Operating mode	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
organize	256KX18	-	128KX36	128KX36	128KX36
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	BGA	-	BGA	BGA	BGA
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY	-	GRID ARRAY	GRID ARRAY	GRID ARRAY
Parallel/Serial	PARALLEL	-	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	2.3 mm	-	2.3 mm	2.3 mm	2.3 mm
Maximum supply voltage (Vsup)	3.45 V	-	3.45 V	3.45 V	3.45 V
Minimum supply voltage (Vsup)	3.15 V	-	3.15 V	3.15 V	3.15 V
Nominal supply voltage (Vsup)	3.3 V	-	3.3 V	3.3 V	3.3 V
surface mount	YES	-	YES	YES	YES
technology	BICMOS	-	BICMOS	BICMOS	BICMOS
Terminal form	BALL	-	BALL	BALL	BALL
Terminal pitch	1.27 mm	-	1.27 mm	1.27 mm	1.27 mm
Terminal location	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM
width	14 mm	-	14 mm	14 mm	14 mm

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