2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07A
Data Sheet
FEATURES:
•
High Gain:
– Typically 28 dB gain across 2.4~2.5 GHz over
temperature 0°C to +85°C
High linear output power:
– >28 dBm P1dB
- Please refer to “Absolute Maximum Stress
Ratings” on page 4
– Meets 802.11g OFDM ACPR requirement up to
24 dBm
– ~2.5% added EVM up to 20 dBm for
54 Mbps 802.11g signal
– Meets 802.11b ACPR requirement up to 24 dBm
High power-added efficiency/Low operating
current for both 802.11g/b applications
– ~30.8%/220 mA @ P
OUT
= 23.5 dBm for both
802.11g and 802.11b
Single-pin low I
REF
power-up/down control
– I
REF
<2 mA
Low idle current
– ~70 mA I
CQ
High-speed power-up/down
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay
included <200 ns
• High temperature stability
– ~1 dB gain/power variation between 0°C to +85°C
• Excellent On-chip power detection
• 20 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
– 12-contact XQFN – 2mm x 2mm
• All non-Pb (lead-free) devices are RoHS compliant
•
•
APPLICATIONS:
•
•
•
•
WLAN (IEEE 802.11g/b)
Home RF
Cordless phones
2.4 GHz ISM wireless equipment
•
•
•
PRODUCT DESCRIPTION
The SST12LP07A is a versatile power amplifier based on
the highly-reliable InGaP/GaAs HBT technology.
The SST12LP07A can be easily configured for high-power
applications with good power-added efficiency while oper-
ating over the 2.4- 2.5 GHz frequency band. It typically pro-
vides 28 dB gain with 30.8% power-added efficiency @
P
OUT
= 23.5 dBm for both 802.11g and 802.11b.
The SST12LP07A has excellent linearity, typically ~2.5%
added EVM at 20 dBm output power which is essential for
54 Mbps 802.11g operation while meeting 802.11g spec-
trum mask at 23.5 dBm.
The SST12LP07A also features easy board-level usage
along with high-speed power-up/down control through a
single combined reference voltage pin. Ultra-low reference
current (total I
REF
~2 mA) makes the SST12LP07A control-
lable by an on/off switching signal directly from the base-
band chip. These features coupled with low operating
current make the SST12LP07A ideal for the final stage
power amplification in battery-powered 802.11g/b WLAN
transmitter applications.
©2008 Silicon Storage Technology, Inc.
S71391-01-000
11/08
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
The SST12LP07A has an excellent on-chip, single-ended
power detector, which features wide-range (>15 dB) with
dB-wise linearization. The excellent on-chip power
detector provides a reliable solution to board-level
power control.
The SST12LP07A is offered in 12-contact XQFN package.
See Figure 2 for pin assignments and Table 1 for pin
descriptions.
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07A
Data Sheet
FUNCTIONAL BLOCKS
VCC1
11
NC
12
NC
RFIN
NC
1
2
3
10
9
8
NC
RFOUT/VCC2
NC
NC
7
6
DET
Bias Circuit
4
VCCb
FIGURE 1: Functional Block Diagram
5
VREF
1391 B1.2
©2008 Silicon Storage Technology, Inc.
S71391-01-000
11/08
2
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07A
Data Sheet
PIN ASSIGNMENTS
VCC1
11
NC
12
NC
RFIN
NC
1
10
9
NC
RFOUT/VCC2
NC
Top View
2
3
4
VCCb
5
VREF
6
DET
1391 P1.1
NC
8
7
Function
Low-inductance GND pad
Unconnected pin
I
RF input, DC decoupled
Unconnected pin
Supply voltage for bias circuit
1
st
and 2
nd
stage idle current control
On-chip power detector
Unconnected pin
Power Supply, 2
nd
stage / RF output
Unconnected pin
Unconnected pin
O
Power supply, 1
st
stage
Unconnected pin
T1.0 1391
(Contacts
facing down)
FIGURE 2: Pin Assignments for 12-contact XQFN
PIN DESCRIPTIONS
TABLE 1: Pin Description
Symbol
GND
NC
RFIN
NC
VCCb
VREF
Det
NC
VCC2/RFOUT
NC
NC
VCC1
NC
1. I=Input, O=Output
Pin No.
0
1
2
3
4
5
6
7
8
9
10
11
12
Pin Name
Ground
No Connection
No Connection
Power Supply
Type
1
PWR
PWR
No Connection
Power Supply
No Connection
No Connection
Power Supply
No Connection
PWR
PWR/O
©2008 Silicon Storage Technology, Inc.
S71391-01-000
11/08
3
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07A
Data Sheet
ELECTRICAL SPECIFICATIONS
The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current spec-
ifications. Refer to Figures 3 through 10 for the RF performance.
Absolute Maximum Stress Ratings
(Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Input power to pin 2 (P
IN
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm
Average output power (P
OUT
)
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +26 dBm
Supply Voltage at pins 4, 8, and 11 (V
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.0V
Reference voltage to pin 5 (V
REF
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.3V
DC supply current (I
CC
)
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mA
Operating Temperature (T
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC
Storage Temperature (T
STG
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the maximum rating
of average output power could cause permanent damage to the device.
2. Measured with 100% duty cycle 54 Mbps 802.11g OFDM Signal
Operating Range
Range
Industrial
Ambient Temp
-40°C to +85°C
V
CC
3.3V
TABLE 2: DC Electrical Characteristics at 25°C
Symbol
V
CC
I
CC
Supply Current
for 802.11g, 23.5 dBm
for 802.11b, 23.5 dBm
I
CQ
V
REG
Idle current for 802.11g to meet EVM ~2.5% @ 20 dBm
Reference Voltage for, with 130Ω resistor
2.75
220
220
70
2.85
2.95
mA
mA
mA
V
T2.1 1391
Parameter
Supply Voltage at pins 4, 8, 11
Min.
3.0
Typ
3.3
Max.
3.6
Unit
V
Test Conditions
TABLE 3: AC Electrical Characteristics for Configuration at 25°C
Symbol
F
L-U
G
G
VAR1
G
VAR2
ACPR
Added EVM
2f, 3f, 4f, 5f
Parameter
Frequency range
Small signal gain
Gain variation over band (2412–2484 MHz)
Gain ripple over channel (20 MHz)
Meet 11b spectrum mask
Meet 11g OFDM 54 Mbps spectrum mask
@ 20 dBm output with 11g OFDM 54 Mbps signal
Harmonics at 22 dBm, without external filters
23
23
2.5
-40
0.2
Min.
2412
27
28
±0.5
Typ
Max.
2484
Unit
MHz
dB
dB
dB
dBm
dBm
%
dBc
T3.2 1391
©2008 Silicon Storage Technology, Inc.
S71391-01-000
11/08
4
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07A
Data Sheet
TYPICAL PERFORMANCE CHARACTERISTICS
Test Conditions: V
CC
= 3.3V, T
A
= 25°C, unless otherwise specified
S11 versus Frequency
0
-5
-10
-15
-20
-25
-30
0.0
S12 (dB)
0
-10
-20
S11 (dB)
-30
-40
-50
-60
-70
-80
0.0
S12 versus Frequency
1.0
2.0
3.0
4.0
5.0
6.0
7.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
Frequency (GHz)
Frequency (GHz)
S21 versus Frequency
40
30
20
S21 (dB)
S22 (dB)
10
0
-10
-20
-30
-40
0.0
-25
-30
0.0
-10
-15
-20
0
-5
S22 versus Frequency
1.0
2.0
3.0
4.0
5.0
6.0
7.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
Frequency (GHz)
Frequency (GHz)
1391 S-Parms.1.0
FIGURE 3: S-Parameters
©2008 Silicon Storage Technology, Inc.
S71391-01-000
11/08
5
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