FLU10ZME1
L-Band Medium & High Power GaAs FET
FEATURES
・High
Output Power: P1dB=29.5dBm(typ.)
・High
Gain: G1dB=13.0dB(typ.)
・Low
Cost Plastic(SMT) Package
・Tape
and Reel Available
DESCRIPTION
The FLU10ZME1 is a GaAs FET designed for base station and CPE
application up to a 3.0GHz frequency range. This is a new product
series using a plastic surface mount package that has been optimized
for high volume cost driven applications.
SEDI’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C)
Item
Drain-Source Voltage
Gate-Soutce Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
T
CH
Rating
15
-5
6.9
-55 to +150
175
Unit
V
V
W
deg.C
deg.C
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25deg.C)
Item
DC Input Voltage
Channel Temperature
Forward Gate Current
Reverse Gate Current
Gate Resistance
Symbol
V
DS
T
ch
I
GF
I
GR
R
g
Condition
＜10
＜145
＜4.8
＞-0.5
400
Unit
V
deg.C
mA
mA
ohm
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)
Item
Drain Current
Trans Conductance
Pinch-off Voltage
Gate-Source Breakdown
Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Thermal Resistance
Symbol
I
DSS
gm
V
p
V
GSO
Test Conditions
V
DS
=5V,V
GS
=0V
V
DS
=5V,I
DS
=200mA
V
DS
=5V,I
DS
=15mA
I
GS
=-15µA
V
DS
=10V
f=2.0GHz
I
DS
=0.6I
DSS
(Typ.)
Channel to Case
Min.
-
-
-1.0
-5
Limit
Typ.
300
150
-2.0
-
Max.
450
-
-3.5
-
Unit
mA
mS
V
V
P
1dB
G
1dB
R
th
28.5
12.0
-
29.5
13.0
15
-
-
18
dBm
dB
deg.C/W
G.C.P.:Gain Compression Point
CASE STYLE: ZM
Note1: Product supplied to this specification are 100% DC performance tested.
Note2:The RF parameters are measured on a lot basis by sample testing 10 pcs/lot.
Acceptance Criteria:(accept/reject)=(0/1). Any lot failure shall be 100% retested.
ESD
Class
II
500
to
1999 V
Note : Based on EIAJ ED-4701 C-111A (C=100pF,R=1.5kohm)
Edition 1.1
Apr. 2012
1
FLU10ZME1
L-Band Medium & High Power GaAs FET
POWER DERATING CURVE
8
7
Total Power Dissipation [W]
6
5
4
3
2
1
0
0
50
100
150
200
Case Temperature [deg.C]
OUTPUT POWER , POWER ADDED EFFICIENCY
vs. INPUT POWER
f= 2.0G H z VD S= 10V ID S= 0.6ID SS
34
32
100
28
26
24
22
20
18
16
14
2
4
Pout
60
40
η
add
20
0
6
8
10 12 14 16 18 20
In p u t P o w er [d B m ]
Edition 1.1
Apr. 2012
2
P ow e r Adde d Efficie ncy [%]
30
Output P ow e r [dBm ]
80
FLU10ZME1
L-Band Medium & High Power GaAs FET
■
S-PARAMETER
+50j
+25j
+100j
+90°
1.0
+10j
+250j
3.0
±180° 15
9
Scale for |S
21
|
2.0GHz
0
2.0GHz
3.0
1.0
2.0GHz
1.0
∞
3.0
0°
-10j
-250j
0.4
-25j
-50j
-100j
S11
S22
0.6
-90°
Scale for |S
12
|
S12
S21
VDS=10V , IDS=180mA
Freq. S11
[GHz]
MAG
0.5
0.88
1
0.78
1.5
0.75
2
0.72
2.5
0.71
3
0.69
3.5
0.73
4
0.76
4.5
0.79
5
0.80
S21
ANG
MAG
-82.82
9.02
-128.10
5.90
-153.80
4.31
-174.63
3.45
165.70
2.85
145.11
2.41
126.72
2.05
112.29
1.74
100.63
1.48
93.48
1.25
S12
ANG
MAG
126.68
0.05
96.81
0.06
76.65
0.07
60.18
0.07
43.48
0.08
27.24
0.08
11.34
0.08
-3.63
0.08
-17.87
0.09
-30.30
0.09
S22
ANG
MAG
48.61
0.37
27.98
0.30
19.62
0.27
13.94
0.25
8.34
0.22
4.74
0.20
-1.38
0.19
-7.63
0.22
-13.21
0.27
-16.94
0.34
ANG
-52.39
-78.22
-91.11
-101.36
-114.34
-128.63
-153.74
179.95
161.06
146.70
Edition 1.1
Apr. 2012
3
FLU10ZME1
L-Band Medium & High Power GaAs FET
OUTPUT POWER , DRAIN CURRENT vs. INPUT POWER with Wide band tuning condition.
@ VDS=10V IDS(DC)=150mA VGS(DC)=-0.9V
P in-P out,Idd& P .A.E @ f=1.8GH z
Pin-Pout,Idd& P.A.E @ f=2.0GH z
35
P out
Ids[m A]
P .A.E.
300
35
300
Pout
Ids[mA]
P.A.E.
Output P ow er [dB m]
30
260
D rain C urrent [mA]
30
Output P ow er [dB m]
75
Power Added Efficiency[%]
260
D rain C urrent [mA]
75
Power Added Efficiency[%]
25
220
25
220
20
180
50
50
20
180
15
140
25
25
15
140
0
10
4
6
8 10 12 14 16 18 20 22 24 26
Input P ow er [dB m]
100
0
10
4
6
8 10 12 14 16 18 20 22 24 26
Input Pow er [dB m]
100
OUTPUT POWER vs. FREQUENCY
P in-P out,Idd& P .A.E @ f=2.2GH z
35
P out
300
35
Pin=25dBm
260
D rain C urrent [mA]
Output P ow er [dB m]
30
30
Output P ow er [dB m]
Ids[m A]
P .A.E.
Pin=20dBm
P1dB
Pin=15dBm
25
220
75
Power Added Efficiency[%]
25
20
180
50
Pin=10dBm
20
15
140
25
Pin=5dBm
15
1.7
1.9
2.1
2.3
10
4
6
8 10 12 14 16 18 20 22 24 26
Input P ow er [dB m]
100
0
Frequency[GHz]
Edition 1.1
Apr. 2012
4
FLU10ZME1
L-Band Medium & High Power GaAs FET
@ VDS=10V IDS(DC)=150mA VGS(DC)=-0.9V
IMD vs OUTPUT POWER(2-tone)
-25
Inter Modulation D istation [dB c]
-30
-35
-40
-45
-50
-55
-60
-65
-70
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
Output P ow er(2-tone) [dB m] @ df=+5MH z
ACLR(IM D) [dBc]
-35
-40
-45
-50
-55
-60
W-CDMA 2-CARRIER IMD(ACLR)
*fo=2.1325G Hz *f1=2.1475G Hz
-25
-30
IM 3-L
IM 3-U
IM 5-L
IM 5-U
1.8GH z
2.0GH z
2.2GH z
1
IM3
IM5
15
16
17
18
19
20
21
22
23
24
25
2-tone total O utput Powe r [dBm]
W-CDMA SINGLE CARRIER ACLR
*fo=2.1325G H z
W-CDMA SINGLE CARRIER CCDF AND GAIN
*fo=2.1325G Hz
-25
-30
-35
AC LR [dB c]
-40
-45
-50
-55
-60
15
16
17
18
19
20 21
22
23
24
25
26
15
-5M Hz
+ 5M Hz
-10M Hz
+ 10M Hz
14
13
C C D F,Gain [dB ]
12
11
10
9
8
7
6
5
12
17
22
Output P ow er [dB m]
0.01%
Peak
Ga in
Output P ow er[dB m ]
Note : *All signal are W-CDMA modulation at 3GPP3.4.12-00 BS-1 64ch non clipping.
All data was taken with the board tuned for wide band.
Edition 1.1
Apr. 2012
5
MCU
京公网安备 11010802033920号
EEWORLD
