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WEDPNF8M722V-1010BC

Description
Memory Circuit, 8MX72, CMOS, PBGA275, 35 X 25 MM, PLASTIC, BGA-275
Categorystorage    storage   
File Size1MB,43 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

WEDPNF8M722V-1010BC Overview

Memory Circuit, 8MX72, CMOS, PBGA275, 35 X 25 MM, PLASTIC, BGA-275

WEDPNF8M722V-1010BC Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeBGA
package instructionBGA,
Contacts275
Reach Compliance Codecompliant
Other featuresUSER CONFIGURABLE 2M X 8 OR 1M X 16 OR 512K X 32 FLASH
JESD-30 codeR-PBGA-B275
length32 mm
memory density603979776 bit
Memory IC TypeMEMORY CIRCUIT
memory width72
Number of functions1
Number of terminals275
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX72
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height2.54 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width25 mm
White Electronic Designs
WEDPNF8M722V-XBX
8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module
Multi-Chip Package
ADVANCED*
FEATURES
n
n
Sector Architecture
Package:
• 275 Plastic Ball Grid Array (PBGA), 32mm x 25mm
•One 16KByte, two 8KBytes, one 32KByte, and fifteen
64KBytes in byte mode
•One 8K word, two 4K words, one 16K word, and
fifteen 32K word sectors in word mode.
•Any combination of sectors can be concurrently
erased. Also supports full chip erase
n
Boot Code Sector Architecture (Bottom)
n
Embedded Erase and Program Algorithms
n
n
Commercial, Industrial and Military Temperature Ranges
n
Weight:
• WEDPNF8M722V-XBX - 2.5 grams typical
SDRAM PERFORMANCE FEATURES
n
Organized as 8M x 72
n
High Frequency = 100, 125MHz
n
Single 3.3V ±0.3V power supply
n
Erase Suspend/Resume
•Supports reading data from or programing data to a
sector not being erased
Fully Synchronous; all signals registered on positive
edge of system clock cycle
changed every clock cycle
BENEFITS
n
n
n
Internal pipelined operation; column address can be
n
Internal banks for hiding row access/precharge
n
Programmable Burst length 1,2,4,8 or full page
n
4096 refresh cycles
44% SPACE SAVINGS
Reduced part count
•25% I/O Reduction
n
Reduced I/O count
n
Suitable for hi-reliability applications
n
SDRAM Upgradeable to 16M x 72 density (contact
FLASH PERFORMANCE FEATURES
n
User Configurable as 2Mx8, 1M x16 or 512K x 32
n
Access Times of 100, 120, 150ns
n
3.3 Volt for Read and Write Operations
n
1,000,000 Erase/Program Cycles
factory for information)
* This data sheet describes a product that may or may not be under
development and is subject to change or cancellation without notice.
September 2002 Rev. 2
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
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