BSS138PS
60 V, 320 mA dual N-channel Trench MOSFET
Rev. 1 — 2 November 2010
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small
SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
Conditions
T
amb
= 25
°C
T
amb
= 25
°C
T
amb
= 25
°C;
V
GS
= 10 V
T
j
= 25
°C;
V
GS
= 10 V;
I
D
= 300 mA
[1]
Min
-
-
-
-
Typ
-
-
-
0.9
Max
60
±20
320
1.6
Unit
V
V
mA
Ω
Per transistor
[2]
[1]
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1 cm
2
.
Pulse test: t
p
≤
300
μs; δ ≤
0.01.
NXP Semiconductors
BSS138PS
60 V, 320 mA dual N-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Symbol
S1
G1
D2
S2
G2
D1
Description
source1
gate1
drain2
source2
gate2
drain1
1
2
3
S
1
G
1
S
2
G
2
Simplified outline
6
5
4
Graphic symbol
D
1
D
2
msd901
3. Ordering information
Table 3.
Ordering information
Package
Name
BSS138PS
SC-88
Description
plastic surface-mounted package; 6 leads
Version
SOT363
Type number
4. Marking
Table 4.
BSS138PS
[1]
* = placeholder for manufacturing site code
Marking codes
Marking code
[1]
NZ*
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
Parameter
drain-source voltage
gate-source voltage
drain current
Conditions
T
amb
= 25
°C
T
amb
= 25
°C
V
GS
= 10 V
T
amb
= 25
°C
T
amb
= 100
°C
I
DM
peak drain current
T
amb
= 25
°C;
single pulse; t
p
≤
10
μs
[1]
Min
-
-
-
-
-
Max
60
±20
320
200
1.2
Unit
V
V
mA
mA
A
Per transistor
BSS138PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 2 November 2010
2 of 16
NXP Semiconductors
BSS138PS
60 V, 320 mA dual N-channel Trench MOSFET
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
tot
Parameter
total power dissipation
Conditions
T
amb
= 25
°C
T
sp
= 25
°C
Source-drain diode
I
S
Per device
P
tot
T
j
T
amb
T
stg
[1]
[2]
[2]
[1]
Min
-
-
-
[1]
Max
280
320
960
290
420
150
+150
+150
Unit
mW
mW
mW
mA
mW
°C
°C
°C
source current
total power dissipation
junction temperature
ambient temperature
storage temperature
T
amb
= 25
°C
T
amb
= 25
°C
-
-
−55
−65
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
120
P
der
(%)
80
017aaa001
120
I
der
(%)
80
017aaa002
40
40
0
−75
−25
25
75
125
175
T
amb
(°C)
0
−75
−25
25
75
125
175
T
amb
(°C)
P
tot
-
P
der
=
-----------------------
×
100
%
P
tot
(
25°C
)
Fig 1.
Normalized total power dissipation as a
function of ambient temperature
Fig 2.
I
D
-
I
der
=
-------------------
×
100
%
I
D
(
25°C
)
Normalized continuous drain current as a
function of ambient temperature
BSS138PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 2 November 2010
3 of 16
NXP Semiconductors
BSS138PS
60 V, 320 mA dual N-channel Trench MOSFET
10
I
D
(A)
1
017aaa122
Limit R
DSon
= V
DS
/I
D
(1)
(2)
10
−1
(3)
(4)
10
−2
(5)
(6)
10
−3
10
−1
1
10
V
DS
(V)
10
2
I
DM
= single pulse
(1) t
p
= 100
μs
(2) t
p
= 1 ms
(3) t
p
= 10 ms
(4) DC; T
sp
= 25
°C
(5) t
p
= 100 ms
(6) DC; T
amb
= 25
°C;
drain mounting pad 1 cm
2
Fig 3.
Per transistor: Safe operating area; junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
Per device
R
th(j-a)
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
in free air
[1]
Conditions
in free air
[1]
[2]
Min
-
-
-
Typ
390
340
-
Max
445
390
130
Unit
K/W
K/W
K/W
Per transistor
-
-
300
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
BSS138PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 2 November 2010
4 of 16
NXP Semiconductors
BSS138PS
60 V, 320 mA dual N-channel Trench MOSFET
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.5
0.33
0.25
0.1
0.2
0.05
017aaa034
0
10
0.02
0.01
1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 4.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
017aaa035
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.5
0.25
0.1
0.33
0.2
0.05
0
10
0.02
0.01
1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for drain 1 cm
2
Fig 5.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
BSS138PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 2 November 2010
5 of 16
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