BS62LV1023SCP70 datasheet, PDF

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BS62LV1023SCP70: DescriptionStandard SRAM, 128KX8, 70ns, CMOS, PDSO32, SOP-32; Categorystorage storage; File Size421KB，10 Pages; ManufacturerBrilliance; Environmental Compliance

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BS62LV1023SCP70 Overview

Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, SOP-32

BS62LV1023SCP70 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Brilliance
package instruction	SOP, SOP32,.56
Reach Compliance Code	unknown
Maximum access time	70 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G32
length	20.447 mm
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Encapsulate equivalent code	SOP32,.56
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
power supply	3 V
Certification status	Not Qualified
Maximum seat height	2.997 mm
Maximum standby current	3e-7 A
Minimum standby current	1.5 V
Maximum slew rate	0.02 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.4 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
width	11.303 mm

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BSI

FEATURES

Very Low Power/Voltage CMOS SRAM

128K X 8 bit

DESCRIPTION

BS62LV1023

• Vcc operation voltage : 2.4V ~ 3.6V

• Very low power consumption :

Vcc = 3.0V C-grade : 20mA (Max.) operating current

I- grade : 25mA (Max.) operating current

0.02uA (Typ.) CMOS standby current

• High speed access time :

-70

70ns (Max.) at Vcc = 3.0V

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE2, CE1, and OE options

PRODUCT FAMILY

PRODUCT

FAMILY

BS62LV1023SC

BS62LV1023TC

BS62LV1023STC

BS62LV1023PC

BS62LV1023JC

BS62LV1023DC

BS62LV1023SI

BS62LV1023TI

BS62LV1023STI

BS62LV1023PI

BS62LV1023JI

BS62LV1023DI

OPERATING

TEMPERATURE

Vcc

RANGE

The BS62LV1023 is a high performance, very low power CMOS

Static Random Access Memory organized as 131,072 words by 8 bits

and operates from a wide range of 2.4V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current of

0.02uA and maximum access time of 70ns in 3V operation.

Easy memory expansion is provided by an active LOW chip

enable (CE1), an active HIGH chip enable (CE2), and active LOW

output enable (OE) and three-state output drivers.

The BS62LV1023 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS62LV1023 is available in DICE form, JEDEC standard 32 pin

450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP, 8mmx13.4

mm STSOP and 8mmx20mm TSOP.

SPEED

(ns)

Vcc= 3.0V

POWER DISSIPATION

STANDBY

Operating

CCSB1

, Max)

PKG TYPE

SOP-32

TSOP-32

STSOP-32

PDIP-32

SOJ-32

DICE

SOP-32

TSOP-32

STSOP-32

PDIP-32

SOJ-32

DICE

Vcc=3.0V

+0 C to +70 C

2.4V ~ 3.6V

1.0uA

20mA

-40 C to +85 C

2.4V ~ 3.6V

1.5uA

25mA

PIN CONFIGURATIONS

A16

A14

A12

DQ0

DQ1

DQ2

GND

BS62LV1023SC

BS62LV1023SI

BS62LV1023PC

BS62LV1023PI

BS62LV1023JC

BS62LV1023JI

VCC

A15

CE2

A13

A11

A10

CE1

DQ7

DQ6

DQ5

DQ4

DQ3

BLOCK DIAGRAM

A12

A14

A16

A15

A13

A11

•

Address

Input

Buffer

Row

Decoder

1024

Memory Array

1024 x 1024

1024

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

Data

Input

Buffer

Column I/O

Write Driver

Sense Amp

128

Column Decoder

Control

Address Input Buffer

A11

A13

CE2

A15

VCC

A16

A14

A12

BS62LV1023TC

BS62LV1023STC

BS62LV1023TI

BS62LV1023STI

A10

CE1

DQ7

DQ6

DQ5

DQ4

DQ3

GND

DQ2

DQ1

DQ0

Data

Output

Buffer

Brilliance Semiconductor, Inc

reserves the right to modify document contents without notice.

R0201-BS62LV1023

•

CE2

CE1

Vdd

Gnd

A5 A4 A3 A2 A1 A0 A10

Revision 2.3

Jan. 2004

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