BS62LV2006TAG70 datasheet, PDF

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BS62LV2006TAG70: DescriptionStandard SRAM, 256KX8, 70ns, CMOS, PDSO32, 8 X 20 MM, GREEN, TSOP-32; Categorystorage storage; File Size343KB，11 Pages; ManufacturerBrilliance

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BS62LV2006TAG70 Overview

Standard SRAM, 256KX8, 70ns, CMOS, PDSO32, 8 X 20 MM, GREEN, TSOP-32

BS62LV2006TAG70 Parametric

Parameter Name	Attribute value
Maker	Brilliance
Parts packaging code	TSOP
package instruction	TSSOP,
Contacts	32
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	70 ns
JESD-30 code	R-PDSO-G32
length	18.4 mm
memory density	2097152 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	32
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
organize	256KX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial	PARALLEL
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	2.4 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	AUTOMOTIVE
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
width	8 mm

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Very Low Power CMOS SRAM

256K X 8 bit

Green package materials are compliant to RoHS

BS62LV2006

FEATURES

Wide V

operation voltage : 2.4V ~ 5.5V

Very low power consumption :

= 3.0V Operation current : 18mA (Max.)

2mA (Max.)

Standby current : 0.1uA (Typ.)

= 5.0V Operation current : 45mA (Max.)

10mA (Max.)

Standby current : 0.6uA (Typ.)

High speed access time :

-70

70ns (Max.) at V

2.7~5.5V

Automatic power down when chip is deselected

Easy expansion with CE2, CE1 and OE options

Three state outputs and TTL compatible

Fully static operation

Data retention supply voltage as low as 1.5V

at 70ns

at 1MHz

at 25

at 70ns

at 1MHz

at 25

DESCRIPTION

The BS62LV2006 is a high performance, very low power CMOS

Static Random Access Memory organized as 262,144 by 8 bits and

operates form a wide range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both

high speed and low power features with typical CMOS standby

current of 0.1uA at 3.0V/25

C and maximum access time of 70ns at

2.7V/125

Easy memory expansion is provided by an active LOW chip enable

(CE1), an active HIGH chip enable (CE2), and active LOW output

enable (OE) and three-state output drivers.

The BS62LV2006 has an automatic power down feature, reducing

the power consumption significantly when chip is deselected.

The BS62LV2006 is available in DICE form, JEDEC standard 32 pin

450mil Plastic SOP, 8mmx13.4mm STSOP, 8mmx20mm TSOP and

36-ball BGA package.

POWER CONSUMPTION

POWER DISSIPATION

PRODUCT

FAMILY

BS62LV2006HA

BS62LV2006SA

BS62LV2006STA

BS62LV2006TA

Automotive

Grade

-40

C to +125

0.6uA

0.1uA

30uA

20uA

10mA

45mA

2mA

18mA

STSOP-32

TSOP-32

OPERATING

TEMPERATURE

STANDBY

CCSB1

, Typ)

CCSB1

, Max)

Operating

, Max)

PKG TYPE

=5.0V

=3.0V

=5.0V

=3.0V

=5V

1MHz

Max.

=3V

1MHz

Max.

BGA-36-0608

SOP-32

PIN CONFIGURATIONS

BLOCK DIAGRAM

A10

CE1

DQ7

DQ6

DQ5

DQ4

DQ3

GND

DQ2

DQ1

DQ0

•

BS62LV2006TC

BS62LV2006TI

BS62LV2006STC

BS62LV2006STI

A11

A13

CE2

A15

VCC

A17

A16

A14

A12

A14

A16

A17

A15

A11

A13

Address

Input

Buffer

Row

Decoder

1024

Memory Array

1024 x 2048

2048

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

Data

Input

Buffer

256

Column Decoder

Control

Address Input Buffer

Column I/O

Write Driver

Sense Amp

A17

A16

A14

A12

DQ0

DQ1

DQ2

GND

•

CE2

BS62LV2006SC

BS62LV2006SI

VCC

A15

CE2

A13

A11

A10

CE1

DQ7

DQ6

DQ5

DQ4

DQ3

Data

Output

Buffer

DQ4

DQ0

DQ5

DQ1

VSS

VCC

VSS

CE2

CE1

GND

DQ6

A17

DQ2

A6 A5 A10 A4 A3 A2 A1 A0

DQ7

CE1

A16

A15

DQ3

A10

A11

A12

A13

A14

36-ball BGA top view

Brilliance Semiconductor, Inc.

reserves the right to change products and specifications without notice.

R0201-BS62LV2006A

Revision 1.2A

Mar.

2006

BS62LV2006TAG70 Related Products

	BS62LV2006TAG70	BS62LV2006STAG70	BS62LV2006STA-70	BS62LV2006SAG70	BS62LV2006SA-70	BS62LV2006TA-70
Description	Standard SRAM, 256KX8, 70ns, CMOS, PDSO32, 8 X 20 MM, GREEN, TSOP-32	Standard SRAM, 256KX8, 70ns, CMOS, PDSO32, 8 X 13.40 MM,GREEN, STSOP-32	Standard SRAM, 256KX8, 70ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP-32	Standard SRAM, 256KX8, 70ns, CMOS, PDSO32, 0.450 INCH, GREEN, PLASTIC, SOP-32	Standard SRAM, 256KX8, 70ns, CMOS, PDSO32, 0.450 INCH, PLASTIC, SOP-32	Standard SRAM, 256KX8, 70ns, CMOS, PDSO32, 8 X 20 MM, TSOP-32
Parts packaging code	TSOP	TSOP	TSOP	SOIC	SOIC	TSOP
package instruction	TSSOP,	TSSOP,	TSSOP,	0.450 INCH, GREEN, PLASTIC, SOP-32	SOP,	TSSOP,
Contacts	32	32	32	32	32	32
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	70 ns	70 ns	70 ns	70 ns	70 ns	70 ns
JESD-30 code	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32
length	18.4 mm	11.8 mm	11.8 mm	20.447 mm	20.447 mm	18.4 mm
memory density	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1
Number of terminals	32	32	32	32	32	32
word count	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
character code	256000	256000	256000	256000	256000	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
organize	256KX8	256KX8	256KX8	256KX8	256KX8	256KX8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSSOP	TSSOP	TSSOP	SOP	SOP	TSSOP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	2.997 mm	2.997 mm	1.2 mm
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V
Nominal supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.5 mm	0.5 mm	0.5 mm	1.27 mm	1.27 mm	0.5 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
width	8 mm	8 mm	8 mm	11.3 mm	11.3 mm	8 mm
Base Number Matches	-	1	1	1	1	-

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