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ST303S12MDH1L

Description
Silicon Controlled Rectifier, 471A I(T)RMS, 300000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AE
CategoryAnalog mixed-signal IC    Trigger device   
File Size309KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

ST303S12MDH1L Overview

Silicon Controlled Rectifier, 471A I(T)RMS, 300000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AE

ST303S12MDH1L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionPOST/STUD MOUNT, O-MUPM-H2
Reach Compliance Codecompliant
Other featuresHIGH SPEED
Nominal circuit commutation break time30 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Maximum holding current600 mA
JEDEC-95 codeTO-209AE
JESD-30 codeO-MUPM-H2
JESD-609 codee0
Maximum leakage current50 mA
On-state non-repetitive peak current8320 A
Number of components1
Number of terminals2
Maximum on-state current300000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current471 A
Maximum repetitive peak off-state leakage current50000 µA
Off-state repetitive peak voltage1200 V
Repeated peak reverse voltage1200 V
surface mountNO
Terminal surfaceTIN LEAD
Terminal formHIGH CURRENT CABLE
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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