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DP200F

Description
TRANSISTOR,BJT,PNP,12V V(BR)CEO,1A I(C),SOT-89
CategoryDiscrete semiconductor    The transistor   
File Size53KB,3 Pages
ManufacturerKODENSHI AUK
Websitehttp://auk.co.kr/
Download Datasheet Parametric Compare View All

DP200F Overview

TRANSISTOR,BJT,PNP,12V V(BR)CEO,1A I(C),SOT-89

DP200F Parametric

Parameter NameAttribute value
MakerKODENSHI AUK
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)1 A
ConfigurationSingle
Minimum DC current gain (hFE)200
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)2 W
surface mountYES
Semiconductor
DP200F
PNP Silicon Transistor
Features
Extremely low collector-to-emitter saturation voltage
( V
CE(SAT)
= -0.3V Typ. @I
C
/I
B
=-1A/-50mA)
Suitable for low voltage large current drivers
Excellent h
FE
linearity
Complementary pair with DN200F
Switching Application
Ordering Information
Type NO.
DP200F
Marking
P04□
Package Code
SOT-89
Outline Dimensions
4.0
0.50±0.1
-0.3
+0.5
unit :
mm
2.5
+0.2
-0.3
1.00±0.3
3
1.82±0.05
-0.1
+0.2
2
0.52±0.05
0.15 Typ.
4.5
1
0.42±0.05
1.5
+0.2
-0.1
0.42
+0.04
0~0.1
-0.02
PIN Connections
1. Base
2. Collector
3. Emitter
KST-8013-000
1

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DP200F
Description TRANSISTOR,BJT,PNP,12V V(BR)CEO,1A I(C),SOT-89
Maker KODENSHI AUK
Reach Compliance Code unknown
Maximum collector current (IC) 1 A
Configuration Single
Minimum DC current gain (hFE) 200
Maximum operating temperature 150 °C
Polarity/channel type PNP
Maximum power dissipation(Abs) 2 W
surface mount YES
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