TrenchP
TM
Power MOSFETs
IXTA120P065T
IXTP120P065T
IXTH120P065T
V
DSS
I
D25
R
DS(on)
=
=
≤
- 65V
- 120A
10mΩ
Ω
P-Channel Enhancement Mode
Avalanche Rated
TO-263 AA (IXTA)
G
S
D (Tab)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
Maximum Ratings
- 65
- 65
±15
±25
- 120
- 360
- 60
1
298
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
J
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
TO-220AB (IXTP)
G
DS
D (Tab)
TO-247 (IXTH)
G
D
S
D (Tab)
G = Gate
S = Source
Features
D
= Drain
Tab = Drain
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
300
260
1.13/10
2.5
3.0
6.0
International Standard Packages
Avalanche Rated
Extended FBSOA
Fast Intrinsic Diode
Low R
DS(ON)
and Q
G
Advantages
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= - 250μA
V
DS
= V
GS
, I
D
= - 250μA
V
GS
=
±
15V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125°C
Characteristic Values
Min. Typ. Max.
- 65
- 2.0
- 4.0
V
V
Easy to Mount
Space Savings
High Power Density
Applications
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
±100
nA
- 10
μA
- 750
μA
10 mΩ
V
GS
= -10V, I
D
= 0.5 • I
D25
, Note 1
© 2013 IXYS CORPORATION, All Rights Reserved
DS100026B(01/13)
IXTA120P065T IXTH120P065T
IXTP120P065T
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
(TO-220)
(TO-247)
0.50
0.21
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= -10V, V
DS
= - 33V, I
D
= - 50A
R
G
= 1Ω (External)
V
GS
= 0V, V
DS
= - 25V, f = 1MHz
V
DS
= -10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max.
45
75
13.2
1345
505
31
28
38
21
185
55
58
S
nF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.42
°C/W
°C/W
°C/W
1 = Gate
2 = Drain
3 = Source
TO-247 Outline
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= - 60A, V
GS
= 0V, Note 1
I
F
= - 60A, -di/dt = -100A/μs
V
R
= - 33V, V
GS
= 0V
Characteristic Values
Min.
Typ.
Max.
- 120
- 480
-1.3
53
77
- 2.9
A
A
V
ns
nC
A
TO-220 Outline
Note
1. Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
TO-263 Outline
Dim.
A
b
b2
c
c2
D
D1
E
1.
2.
3.
4.
Gate
Drain
Source
Drain
E1
e
L
L1
L2
L3
L4
Millimeter
Min.
Max.
4.06
0.51
1.14
0.40
1.14
8.64
8.00
9.65
6.22
2.54
14.61
2.29
1.02
1.27
0
4.83
0.99
1.40
0.74
1.40
9.65
8.89
10.41
8.13
BSC
15.88
2.79
1.40
1.78
0.13
Inches
Min. Max.
.160
.020
.045
.016
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.190
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.005
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTA120P065T IXTH120P065T
IXTP120P065T
Fig. 1. Output Characteristics @ T
J
= 25ºC
-120
V
GS
= -10V
- 9V
- 8V
- 7V
-250
-80
-350
V
GS
= -10V
-300
- 9V
- 8V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
-100
I
D
- Amperes
I
D
- Amperes
-200
- 7V
-150
-100
-60
- 6V
-40
- 6V
-20
- 5V
-50
0
- 5V
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
0
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
-120
V
GS
= -10V
- 9V
- 8V
- 7V
1.8
Fig. 4. R
DS(on)
Normalized to I
D
= - 60A Value vs.
Junction Temperature
V
GS
= -10V
1.6
-100
R
DS(on)
- Normalized
-80
1.4
I
D
= -120A
I
D
= - 60A
I
D
- Amperes
-60
- 6V
1.2
-40
- 5V
-20
1.0
0.8
0
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
-1.8
-2
0.6
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= - 60A Value vs.
Drain Current
1.8
V
GS
= -10V
1.6
T
J
= 125ºC
-140
-120
-100
1.4
Fig. 6. Maximum Drain Current vs.
Case Temperature
R
DS(on)
- Normalized
I
D
- Amperes
T
J
= 25ºC
-80
-60
-40
-20
1.2
1.0
0.8
0
-60
-120
-180
-240
-300
-360
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2013 IXYS CORPORATION, All Rights Reserved
IXTA120P065T IXTH120P065T
IXTP120P065T
Fig. 7. Input Admittance
-180
-160
-140
80
25ºC
125ºC
100
T
J
= - 40ºC
Fig. 8. Transconductance
-100
-80
-60
-40
-20
0
-3.0
T
J
= 125ºC
25ºC
- 40ºC
g
f s
- Siemens
-5.0
-5.5
-6.0
-6.5
-120
I
D
- Amperes
60
40
20
0
-3.5
-4.0
-4.5
0
-20
-40
-60
-80
-100
-120
-140
-160
-180
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-300
-10
-9
-250
-8
-7
V
DS
= - 33V
I
D
= - 60A
I
G
= -1mA
Fig. 10. Gate Charge
-200
I
S
- Amperes
V
GS
- Volts
T
J
= 125ºC
T
J
= 25ºC
-6
-5
-4
-3
-2
-1
-150
-100
-50
0
-0.4
0
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
-1.1
-1.2
-1.3
-1.4
-1.5
0
20
40
60
80
100
120
140
160
180
200
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100,000
- 1,000
Fig. 12. Forward-Bias Safe Operating Area
R
DS(on)
Limit
10ms
100µs
25µs
f
= 1 MHz
1ms
Capacitance - PicoFarads
10,000
I
D
- Amperes
Ciss
- 100
External Lead
Current Limit
Coss
1,000
- 10
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
-30
-35
-40
-1
-1
- 10
- 100
DC, 100ms
Crss
100
0
-5
-10
-15
-20
-25
V
DS
- Volts
V
DS
- Volts
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXTA120P065T IXTH120P065T
IXTP120P065T
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
32
32
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 33V
30
28
T
J
= 25ºC
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 33V
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
t
r
- Nanoseconds
28
t
r
- Nanoseconds
26
24
22
20
18
24
20
I
D
= - 25A
16
I
D
= - 50A
T
J
= 125ºC
12
25
35
45
55
65
75
85
95
105
115
125
16
-26
-30
-34
-38
-42
-46
-50
T
J
- Degrees Centigrade
I
D
- Amperes
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
180
160
140
90
24
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
65
80
23
t
r
V
DS
= - 33V
t
d(on)
- - - -
I
D
= - 50A, - 25A
t
f
V
DS
= - 33V
t
d(off)
- - - -
60
T
J
= 125ºC, V
GS
= -10V
R
G
= 1Ω, V
GS
= -10V
70
t
d(off)
- Nanoseconds
t
d(on)
- Nanoseconds
120
100
80
60
40
20
0
0
2
4
6
8
10
12
14
16
18
60
50
40
30
20
10
0
t
f
- Nanoseconds
t
r
- Nanoseconds
22
I
D
= - 25A
55
21
50
20
I
D
= - 50A
45
19
40
18
25
35
45
55
65
75
85
95
105
115
35
125
R
G
- Ohms
T
J
- Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
25
24
23
62
200
180
160
T
J
= 125ºC
54
50
T
J
= 25ºC
21
T
J
= 125ºC
20
19
18
-26
-30
-34
-38
-42
-46
-50
42
38
34
46
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
300
t
f
V
DS
= - 33V
t
d(off)
- - - -
R
G
= 1Ω, V
GS
= - 10V
58
t
f
V
DS
= - 33V
t
d(off)
- - - -
270
240
T
J
= 125ºC, V
GS
= -10V
t
d(off)
- Nanoseconds
t
f
- Nanoseconds
t
f
- Nanoseconds
140
120
100
80
60
40
210
I
D
= - 50A
180
150
120
90
I
D
= - 25A
60
30
0
t
d(off)
- Nanoseconds
22
T
J
= 25ºC
20
0
0
2
4
6
8
10
12
14
16
18
I
D
- Amperes
R
G
- Ohms
© 2013 IXYS CORPORATION, All Rights Reserved
京公网安备 11010802033920号
EEWORLD
