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2SC3460L

Description
6A, 800V, NPN, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size37KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SC3460L Overview

6A, 800V, NPN, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN

2SC3460L Parametric

Parameter NameAttribute value
Parts packaging codeTO-218
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts2
Reach Compliance Codeunknow
Other featuresHIGH RELIABILITY
Maximum collector current (IC)6 A
Collector-emitter maximum voltage800 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-218
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment100 W
Maximum power dissipation(Abs)100 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)15 MHz
Base Number Matches1
Ordering number:ENN1594B
NPN Triple Diffused Planar Silicon Transistor
2SC3460
800V/6A Switching Regulator Applications
Features
· High breakdown voltage and high reliability.
· High-speed switching (t
f
: 0.1µs typ).
· Wide ASO.
· Adoption of MBIT process.
Package Dimensions
unit:mm
2022A
[2SC3460]
2.6
3.5
15.6
14.0
3.2
4.8
2.0
1.6
2.0
20.0
0.6
1.0
1
0.6
2
3
1.3
1.2
15.0
20.0
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
PW≤300µs, Duty Cycle≤10%
Tc=25˚C
5.45
5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Conditions
1.4
Ratings
1100
800
7
6
20
3
100
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE1
hFE2
VCB=800V, IE=0
VEB=5V, IC=0
VCE=5V, IC=0.4A
VCE=5V, IC=2A
10*
8
Conditions
Ratings
min
typ
max
10
10
40*
Unit
µA
µA
Continued on next page.
* : The h
FE
1 of the 2SC3460 is classified as follows. When specifying the h
FE
1 rank, specify two ranks or more in principle.
Rank
hFE
K
10 to 20
L
15 to 30
M
20 to 40
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61004TN (PC)/N1098HA (KT)/4237AT/3085KI/D054KI, TS No.1594–1/4

2SC3460L Related Products

2SC3460L 2SC3460K 2SC3460-K 2SC3460M 2SC3460-M 2SC3460-L
Description 6A, 800V, NPN, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN 6A, 800V, NPN, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN Power Bipolar Transistor, 6A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN 6A, 800V, NPN, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN Power Bipolar Transistor, 6A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN Power Bipolar Transistor, 6A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN
Parts packaging code TO-218 TO-218 TO-3PB TO-218 TO-3PB TO-3PB
package instruction FLANGE MOUNT, R-PSFM-T3 TO-3PB, 3 PIN FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 2 2 3 2 3 3
Reach Compliance Code unknow unknow unknow unknow unknow unknow
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Maximum collector current (IC) 6 A 6 A 6 A 6 A 6 A 6 A
Collector-emitter maximum voltage 800 V 800 V 800 V 800 V 800 V 800 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 15 10 10 20 20 15
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 100 W 100 W 100 W 100 W 100 W 100 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 15 MHz 15 MHz 15 MHz 15 MHz 15 MHz 15 MHz
Base Number Matches 1 1 1 1 1 1
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