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2N3906Y-G

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size501KB,4 Pages
ManufacturerWeitron Technology
Websitehttp://weitron.com.tw/
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2N3906Y-G Overview

Transistor

2N3906Y-G Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
2N3906
PNP General Purpose Transistors
* “G” Lead(Pb)-Free
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current
Total Device Dissipation T
A
=25 C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tj
Tstg
Value
-40
-40
-5.0
-200
0.625
150
-55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
W
C
C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0)
Collector Cutoff Current (VCE= -40 Vdc, I B =0)
Collector Cutoff Current (VCB= -40 Vdc, IE=0)
Emitter Cutoff Current (VEB= -5.0Vdc, I C =0)
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICE0
ICBO
IEBO
Min
-40
-40
-5.0
-
-
-
Max
-
-
-
-0.1
-0.1
-0.1
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
WEITRON
http://www.weitron.com.tw

2N3906Y-G Related Products

2N3906Y-G 2N3906O-G
Description Transistor Transistor
Reach Compliance Code unknow unknow
Base Number Matches 1 1

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