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BUZ54

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size327KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BUZ54 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

BUZ54 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
Reach Compliance Codenot_compliant
ConfigurationSingle
Maximum drain current (Abs) (ID)5.1 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)

BUZ54 Related Products

BUZ54 BUZ54A
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Is it Rohs certified? incompatible incompatible
Maker Infineon Infineon
Reach Compliance Code not_compliant not_compliant
Configuration Single Single
Maximum drain current (Abs) (ID) 5.1 A 4.5 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0 e0
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 125 W 125 W
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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