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BF822W-T

Description
TRANSISTOR 50 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size62KB,2 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BF822W-T Overview

TRANSISTOR 50 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

BF822W-T Parametric

Parameter NameAttribute value
MakerNXP
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-based maximum capacity1.6 pF
Collector-emitter maximum voltage250 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)60 MHz
VCEsat-Max0.6 V
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