P-Channel Enhancement MOSFET Transistor
BSS84DW
Features
Low on-resistance.
High-speed switching.
Drive circuits can be simple.
Parallel use is easy.
Pb
Lead-free
Typical Applications
P-channel enhancement mode effect transistor.
Switching application.
Mechanical Data
Case: SOT-363.
Molding Compound, UL Flammability Classification Rating 94V-0.
Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202, Method 208.
BSS84DW
SOT-363
Ordering Information
Part Number
BSS84DW□
□:
none is for Lead Free package;
“G” is for Halogen Free package.
Package
SOT-363
Shipping
3000/Tape&Reel
Marking Code
K84
Maximum Ratings
(@T
A
=25℃ unless otherwise specified)
Parameter
Drain-Source Voltage
Gate -Source Voltage
Continuous Drain Current
(NOTE1)
Power Dissipation
(NOTE1)
Symbol
V
DSS
V
GSS
I
D
P
D
Value
-50
±12
-130
0.3
Units
V
V
mA
W
Thermal Characteristics
Parameter
Thermal Resistance Junction to Ambient Air
Operating Junction Temperature Range
Storage Temperature Range
Symbol
R
θJA
T
j
T
STG
Limits
417
-55 to +150
-55 to +150
Unit
℃/W
℃
℃
MTM0107A
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P-Channel Enhancement MOSFET Transistor
BSS84DW
Electrical Characteristics
(@T
A
=25℃ unless otherwise specified)
Symbol
OFF Characteristics
V
DSS
I
DSS
I
GSS
R
DS(ON)
V
GS(TH)
C
iss
C
oss
C
rss
Drain-Source Breakdown Voltage
Drain to Source Leakage Current
Gate-body Leakage
Static Drain-Source On-resistance
Gate Threshold Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V,I
D
=-250μA
V
DS
=-50V, V
GS
=0V
V
GS
=±12V, V
DS
=0V
V
GS
=-5V, I
D
=-0.1A
V
DS
= V
GS
, I
D
=-1mA
-50
-
-
-
-0.8
-
-
-
-
-
-
2.1
-1.6
56
17
5
-
-1
±10
10
-2
-
-
-
pF
V
uA
nA
Ω
V
Parameter
Test conditions
MIN
TYP
MAX
UNIT
ON Characteristics
(NOTE2)
Dynamic Characteristics
(NOTE3)
V
GS
= 0V
V
DS
= -20V
f = 1.0MHz
Switching Characteristics
(NOTE3)
t
d(on)
t
d(off)
NOTE:
1、 Surface Mounted on FR4 Board, t
≤
10 sec
2、 Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2%.
3、 Guaranteed by design, not subject to production.
Turn-on Delay Time
Turn-Off Delay Time
V
DD
=-30V,I
D
=0.2A
V
GS
=-10V,R
G
=25Ω
R
L
=150Ω
-
25
-
-
6
-
nS
MTM0107A
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P-Channel Enhancement MOSFET Transistor
BSS84DW
Ratings and Characteristic Curves
(T
A
=25℃ unless otherwise noted)
MTM0107A
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3
P-Channel Enhancement MOSFET Transistor
BSS84DW
Package Outline Dimensions
(unit:mm)
SOT-363
A
E
SOT-363
Dim
A
B
C
D
D
J
H
Min
2.00
1.15
0.85
0.15
0.25
0.60
0.02
0.05
2.20
Max
2.20
1.35
1.05
0.35
0.40
0.70
0.10
0.15
2.40
K
B
E
G
H
J
K
G
C
Mounting Pad Layout
(unit:mm)
SOT-363
0.50
0.40
1.90
IMPORTANT NOTICE
Galaxy Microelectronics (GME) reserves the right to make changes without further notice to any
product herein to make corrections, modifications , improvements , or other changes. GME does not
assume any liability arising out of the application or use of any product described herein; neither does
it convey any license under its patent rights ,nor the rights of others .
MTM0107A
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0.65
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