NST489AMT1,
NSVT489AMT1G
High Current Surface Mount
NPN Silicon Low V
CE(sat)
Switching Transistor for
Load Management in
Portable Applications
Features
http://onsemi.com
30 VOLTS, 3.0 AMPS
NPN TRANSISTOR
AEC−Q101 Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
Pb−Free Packages are Available*
MAXIMUM RATINGS
(T
A
= 25C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
−
Continuous
Collector Current
−
Peak
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
Max
30
50
5.0
2.0
3.0
Unit
V
V
V
A
A
TSOP−6
CASE 318G
STYLE 6
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25C
Derate above 25C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
T
A
= 25C
Derate above 25C
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Lead #1
Total Device Dissipation
(Single Pulse < 10 s)
Junction and Storage
Temperature Range
Symbol
P
D
(Note 1)
Max
535
4.3
234
1.180
9.4
106
110
50
1.75
−55
to +150
Unit
mW
mW/C
C/W
N2
M
G
DEVICE MARKING
N2 M
G
G
R
qJA
(Note 1)
P
D
(Note 2)
W
mW/C
C/W
C/W
C/W
W
C
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
R
qJA
(Note 2)
R
qJL
(Note 1)
R
qJL
(Note 2)
P
Dsingle
(Notes 2 and 3)
T
J
, T
stg
ORDERING INFORMATION
Device
NST489AMT1
NST489AMT1G
NSVT489AMT1G
Package
TSSOP−6
TSSOP−6
(Pb−Free)
TSSOP−6
(Pb−Free)
Shipping
†
3,000 /
Tape & Reel
3,000 /
Tape & Reel
3,000 /
Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 with 1 oz and 3.9 mm
2
of copper area.
2. FR−4 with 1 oz and 645 mm
2
of copper area.
3. Refer to Figure 8.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
November, 2011
−
Rev. 8
1
Publication Order Number:
NST489AMT1/D
NST489AMT1, NSVT489AMT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage (I
C
= 10 mA, I
B
= 0)
Collector−Base Breakdown Voltage (I
C
= 0.1 mA, I
E
= 0)
Emitter
−Base
Breakdown Voltage (I
E
= 0.1 mA, I
C
= 0)
Collector Cutoff Current (V
CB
= 30 V, I
E
= 0)
Collector−Emitter Cutoff Current (V
CES
= 30 V)
Emitter Cutoff Current (V
EB
= 4.0 V)
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
C
= 1.0 mA, V
CE
= 5.0 V)
(I
C
= 0.5 A, V
CE
= 5.0 V)
(I
C
= 1.0 A, V
CE
= 5.0 V)
(I
C
= 1.0 A, I
B
= 100 mA)
(I
C
= 0.5 A, I
B
= 50 mA)
(I
C
= 0.1 A, I
B
= 1.0 mA)
h
FE
300
300
200
−
−
−
−
−
200
−
−
500
−
0.10
0.06
0.05
−
−
300
−
−
900
−
0.200
0.125
0.075
1.1
1.1
−
15
V
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CES
I
EBO
30
50
5.0
−
−
−
−
−
−
−
−
−
−
−
−
0.1
0.1
0.1
V
V
V
mA
mA
mA
Symbol
Min
Typ
Max
Unit
Collector
−Emitter
Saturation Voltage (Note 4)
V
CE(sat)
Base
−Emitter
Saturation Voltage (Note 4) (I
C
= 1.0 A, I
B
= 0.1 A)
Base
−Emitter
Turn−on Voltage (Note 4) (I
C
= 1.0 A, V
CE
= 2.0 V)
Cutoff Frequency (I
C
= 100 mA, V
CE
= 5.0 V, f = 100 MHz
Output Capacitance (f = 1.0 MHz)
4. Pulsed Condition: Pulse Width
300
msec,
Duty Cycle
2%.
1.0
0.9
0.8
0.7
V
CE(sat)
(V)
0.6
0.5
0.4
0.3
0.2
0.1
0
I
C
= 500 mA
I
C
= 100 mA
0.001
0.01
I
b
(A)
0.1
0.2
I
C
= 1 A
I
C
= 2 A
1.0
0.9
0.8
0.7
V
CE(sat)
(V)
0.6
0.5
0.4
0.3
0.2
0.1
0
0.001
V
BE(sat)
V
BE(on)
f
T
C
obo
V
V
MHz
pF
I
c
/I
b
= 100
I
c
/I
b
= 10
0.01
I
c
(A)
0.1
1
2
Figure 1. V
CE (sat)
versus I
b
800
700
600
500
h
FE
400
300
200
100
0
0.001
0.01
0.1
1
2
0.2
0
0.001
−55C
+125C
+25C
V
BE(on)
(V)
1.2
1.0
0.8
0.6
0.4
−55C
+25C
+125C
Figure 2. V
CE (sat)
versus I
c
V
CE
= 5 V
V
CE
= 5 V
Figure 3. h
FE
versus I
c
http://onsemi.com
2
I
c
(A)
0.01
Figure 4. V
BE(on)
versus I
c
I
c
(A)
0.1
1
2
NST489AMT1, NSVT489AMT1G
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE U
D
H
6
5
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM
LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR
GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D
AND E1 ARE DETERMINED AT DATUM H.
5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE.
DIM
A
A1
b
c
D
E
E1
e
L
L2
M
MIN
0.90
0.01
0.25
0.10
2.90
2.50
1.30
0.85
0.20
0
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.38
0.50
0.18
0.26
3.00
3.10
2.75
3.00
1.50
1.70
0.95
1.05
0.40
0.60
0.25 BSC
10
−
L2
E
GAUGE
PLANE
NOTE 5
e
0.05
A1
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
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Email:
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Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
ÉÉ
1
2
E1
3
L
b
M
C
DETAIL Z
SEATING
PLANE
A
c
DETAIL Z
STYLE 6:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT*
0.60
6X
3.20
0.95
6X
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
4
NST489AMT1/D
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