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BT136-700E

Description
TRIAC, 700V V(DRM), 4A I(T)RMS,
CategoryAnalog mixed-signal IC    Trigger device   
File Size575KB,11 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BT136-700E Overview

TRIAC, 700V V(DRM), 4A I(T)RMS,

BT136-700E Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Critical rise rate of minimum off-state voltage50 V/us
Maximum DC gate trigger current10 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current15 mA
JESD-609 codee0
Maximum leakage current0.5 mA
Maximum on-state voltage1.7 V
Maximum operating temperature120 °C
Maximum rms on-state current4 A
Off-state repetitive peak voltage700 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Trigger device typeTRIAC

BT136-700E Related Products

BT136-700E BT136-700F BT136-700G
Description TRIAC, 700V V(DRM), 4A I(T)RMS, TRIAC, 700V V(DRM), 4A I(T)RMS, TRIAC, 700V V(DRM), 4A I(T)RMS,
Is it Rohs certified? incompatible incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknown unknown unknown
Critical rise rate of minimum off-state voltage 50 V/us 50 V/us 200 V/us
Maximum DC gate trigger current 10 mA 25 mA 50 mA
Maximum DC gate trigger voltage 1.5 V 1.5 V 1.5 V
Maximum holding current 15 mA 15 mA 30 mA
JESD-609 code e0 e0 e0
Maximum leakage current 0.5 mA 0.5 mA 0.5 mA
Maximum on-state voltage 1.7 V 1.7 V 1.7 V
Maximum operating temperature 120 °C 120 °C 120 °C
Maximum rms on-state current 4 A 4 A 4 A
Off-state repetitive peak voltage 700 V 700 V 700 V
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Trigger device type TRIAC TRIAC TRIAC
Critical rise rate of commutation voltage - minimum value - 10 V/us 10 V/us
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