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BT136B500DT/R

Description
TRIAC, 500V V(DRM), 4A I(T)RMS
CategoryAnalog mixed-signal IC    Trigger device   
File Size261KB,5 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BT136B500DT/R Overview

TRIAC, 500V V(DRM), 4A I(T)RMS

BT136B500DT/R Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Maximum DC gate trigger current5 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current10 mA
JESD-609 codee0
Maximum leakage current0.5 mA
Maximum on-state voltage1.7 V
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Maximum rms on-state current4 A
Off-state repetitive peak voltage500 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Trigger device typeTRIAC

BT136B500DT/R Related Products

BT136B500DT/R BT136B500D BT136B600DT/R
Description TRIAC, 500V V(DRM), 4A I(T)RMS TRIAC, 500V V(DRM), 4A I(T)RMS TRIAC, 600V V(DRM), 4A I(T)RMS
Is it Rohs certified? incompatible incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknown unknown unknown
Maximum DC gate trigger current 5 mA 5 mA 5 mA
Maximum DC gate trigger voltage 1.5 V 1.5 V 1.5 V
Maximum holding current 10 mA 10 mA 10 mA
JESD-609 code e0 e0 e0
Maximum leakage current 0.5 mA 0.5 mA 0.5 mA
Maximum on-state voltage 1.7 V 1.7 V 1.7 V
Maximum operating temperature 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Maximum rms on-state current 4 A 4 A 4 A
Off-state repetitive peak voltage 500 V 500 V 600 V
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Trigger device type TRIAC TRIAC TRIAC
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