J/SST111 SERIES
SINGLE N-CHANNEL JFET
FEATURES
DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES
LOW GATE LEAKAGE CURRENT
FAST SWITCHING
ABSOLUTE MAXIMUM RATINGS
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Junction Operating Temperature
Maximum Power Dissipation
Continuous Power Dissipation (J)
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain
Gate to Source
-35V
-35V
50mA
3
3
1
5pA
4ns
J SERIES
SST SERIES
SOT-23
TOP VIEW
D
1
3
-55 to 150°C
-55 to 150°C
360mW
350mW
G
S
2
Continuous Power Dissipation (SST)
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM.
BV
GSS
V
GS(off)
V
GS(F)
I
DSS
I
GSS
I
G
I
D(off)
r
DS(on)
CHARACTERISTIC
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Forward Voltage
Drain to Source Saturation Current
Gate Leakage Current
Gate Operating Current
Drain Cutoff Current
Drain to Source On Resistance
2
TYP
J/SST111
MIN
-35
-3
-10
MAX
J/SST112
MIN
-35
-1
5
-5
MAX
J/SST113
MIN
-35
-3
2
MAX
UNIT
CONDITIONS
I
G
= -1µA, V
DS
= 0V
V
mA
V
DS
= 5V, I
D
= 1µA
I
G
= 1mA, V
DS
= 0V
V
DS
= 15V, V
GS
= 0V
V
GS
= -15V, V
DS
= 0V
V
DG
= 15V, I
D
= 1.0mA
V
DS
= 5V, V
GS
= -10V
V
GS
= 0V, V
DS
= 0.1V
0.7
20
-0.005
-5
0.005
1
30
1
50
1
100
-1
-1
-1
nA
pA
nA
Ω
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 20119 06/15/13
Rev# A5 ECN#J SST 111
DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM.
g
fs
g
os
r
ds(on)
C
iss
C
rss
e
n
CHARACTERISTIC
Forward Transconductance
Output Conductance
Drain to Source On Resistance
Input Capacitance
Reverse Transfer Capacitance
Equivalent Noise Voltage
7
3
3
TYP
6
25
30
12
5
50
12
5
100
12
5
J/SST111
MIN
MAX
J/SST112
MIN
MAX
J/SST113
MIN
MAX
UNIT
mS
µS
Ω
pF
nV/√Hz
CONDITIONS
V
DS
= 20V, I
D
= 1mA
f
= 1kHz
V
GS
= 0V, I
D
= 1mA
f
= 1kHz
V
DS
= 0V, V
GS
= -10V
f
= 1MHz
V
DG
= 10V, I
D
= 1mA
f
= 1 kHz
SWITCHING CHARACTERISTICS
SYM.
t
d(on)
t
r
t
d(off)
t
f
CHARACTERISTIC
Turn On Time
Turn Off Time
TYP
2
2
6
15
ns
V
DD
= 10V
V
GS(H)
= 0V
UNIT
CONDITIONS
SWITCHING CIRCUIT CHARACTERISTICS
SYM.
V
GS(L)
R
L
I
D(on)
J/SST111
-12V
800Ω
12mA
J/SST112
-7V
1600Ω
6mA
J/SST113
-5V
3200Ω
3mA
SOT-23
0.89
1.03
SWITCHING TEST CIRCUIT
V
DD
0.37
0.51
1
1.78
2.05
3
2.80
3.04
V
GS(H)
V
GS(L)
R
L
OUT
2
1.20
1.40
2.10
2.64
0.085
0.180
1k
51
0.89
1.12
51
0.013
0.100
0.55
DIMENSIONS IN
MILLIMETERS
NOTES
1.
2.
3.
Absolute maximum ratings are limiting values above which serviceability may be impaired.
Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3%
Derate 2.8mW/°C above 25°C.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed
at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,
a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,
co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 20119 06/15/13
Rev# A5 ECN#J SST 111
Power technology
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