, O
ne,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Power Field Effect Transistor
N-Channel Enhancement-Mode
Silicon Gate
BUZ71
BUZ71A
TMOS POWER FETs
12 AMPERES
•DSIon) -
0.12 OHMS
60 VOLTS
TO-220AB
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage (RQS - 20 Mil
Gale-Source Voltaga
Drain Currant — Continuous
- Pulsed
Total Power Dissipation @ TC - 25°C
Darata above 25°C
Oparating and Storage-Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
>
— Junction loAmbienl
Maximum Lead Temp, for Soldering Purpoaea,
1/8" from case for 5 seconds
ELECTRICAL CHARACTERISTICS <T
C
- 25°C unless otherwise noted)
Symbol
BUZ71
BUZ71A
Unit
VDSS
VDGR
SO
50
±20
12
48
40
0.32
-55 to 150
Vdc
Vdc
Vde
Adc
Watts
VWC
VGS
ID
'DM
PD
T
J'
T
stg
°C
°C/W
"we
R&JA
3.12
62.5
TL
275
«c
Max
Unit
L
CHARACTERISTICS
OFF
Charactariatle
Symbol
Typ
50
Draln-Sourca Breakdown Voltaga (VQS - 0, ID » 1 mA)
Zero Gate Voltaga Drain Current
(VDS
"
so voitj, VQS - w
(VDS = so voits. v
GS
= o, TJ = i25-ci
Gala-Body Leakage Current, Forward (VQSF - 20 Vdc, VDS "
0)
Gala-Body leakage Current, Reverse (VQSR - 20 Vdc, VQS = 0)
VIBRIDSS
IDSS
IGSSF
IGSSR
—
—
-
—
_
10
10
—
250
1000
Vdc
/lAdc
100
100
nAdc
nAdc
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Charaetarlctk
ON CHARACTERISTICS*
Gate Threshold Voltage
(VDS = VQS. ID -
10
mA
>
Static Drain-Source On-Resistance
(VGS - 1° Vdc. ID = 6 Adc)
Drain-Source On-Voltage (VQS = 10 V)
«D - 6 Adc)
(I
D
- 6 Adc)
Forward Transconductance
(V
DS
- 25V, I
D
= 6 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
BUZ71
BUZ71A
Symbol
Min
TVP
Max
Unit
VGS(th)
'DSIonl
2.1
3.1
4
Vdc
Ohm
-
VDS(on)
0.08
0.10
0.48
0.60
0.10
0.12
Vdc
-
-
—
mhos
BUZ71
BUZ71A
SFS
3
5.5
_
(VDS • 25 v, VGS * o,
f - 1 MHz)
Cis,
c
oss
_
-
—
-
-
14
650
450
280
"
pF
Crs,
(VDS • 40 v. VGS = K> vdc,
ID = 12 A)
See Figures 6 and 12
Q
g
nC
SWITCHING CHARACTERISTICS*
Turn-On Delay Time
Rise Time
Turn-Off Daisy Time
Fall Time
SOURCE DRAIN DIODE CHARACTERISTICS*
Forward On-Voltage
Forward Turn-On Time
Havana Recovery Time
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.25" from package to cantar of die)
Internal Source Inductance
(Measured fram the source lead 0.25* from package to source bond pad)
•Pul*t Test: Pulu Width < 300
til.
Duty Cycle * 2%.
'd(on)
—
-
_
-
—
-
—
—
-
-
-
—
120
110
30
85
90
110
ns
(V
DD
- 30 V, ID = 3 A,
Rgun " 5° ohms)
Sea Figures 11 and 12
tr
'd(off)
tf
VSD
«S - 24 A,
VQS - 0)
2.2
—
—
Vdc
ns
ns
nH
ton
Irr
Ld
-
L,
—
3.5
4.5
-
—
7.5
TO-220AB
NOTES:
1. DMENSIONMG «ND TOLERANCMG
m
ANSI
V14.SM, 1SE.
2. CONTBOU1HC DIMENSION: INCH.
1 miZDEFMSAZONEWHEKALLBODYAND
HAD BMGUUWmES ARE ALLOWED.
STYUS:
HNVGATE
2. DRAIN
1SOUFW
4. HUM
京公网安备 11010802033920号
EEWORLD
