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FT28C512EI-25

Description
EEPROM, 64KX8, 250ns, Parallel, CMOS, CQCC32, CERAMIC, LCC-32
Categorystorage    storage   
File Size396KB,25 Pages
ManufacturerForce Technologies Ltd.
Download Datasheet Parametric View All

FT28C512EI-25 Overview

EEPROM, 64KX8, 250ns, Parallel, CMOS, CQCC32, CERAMIC, LCC-32

FT28C512EI-25 Parametric

Parameter NameAttribute value
MakerForce Technologies Ltd.
Parts packaging codeQFJ
package instructionQCCN,
Contacts32
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time250 ns
Other features100 YEAR DATA RETENTION
Data retention time - minimum100
JESD-30 codeR-CQCC-N32
length13.965 mm
memory density524288 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals32
word count65536 words
character code64000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64KX8
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeQCCN
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Programming voltage5 V
Maximum seat height3.05 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationQUAD
width11.425 mm
Maximum write cycle time (tWC)10 ms
5 Volt Byte Alterable EEPROM
FT28C512/513
FEATURES
• Access time: 90ns
• Simple byte and page write
—Single 5V supply
• No external high voltages or V
PP
control
circuits
—Self-timed
• No erase before write
• No complex programming algorithms
• No overerase problem
• Low power CMOS
—Active: 50mA
—Standby: 500µA
• Software data protection
—Protects data against system level inadvertent
writes
• High speed page write capability
• Highly reliable
—Endurance: 100,000 write cycles
—Data retention: 100 years
• Early end of write detection
—DATA polling
—Toggle bit polling
BLOCK DIAGRAM
X Buffers
Latches and
Decoder
• Two PLCC and LCC pinouts
—FT28C512
FT28C010
EPROM pin compatible
—FT28C513
• Compatible with lower density EEPROMs
DESCRIPTION
The
FT28C512/513
is a 64K x 8 EEPROM, fabricated
with
Force’s
proprietary, high performance, floating
gate CMOS technology.
The FT28C512/513 is a 5V only
device.
The
FT28C512/513
features the JEDEC
approved pin out for byte wide memories, compatible
with industry standard EPROMS.
The
FT28C512/513
supports a 128-byte page write
operation, effectively providing a 39µs/byte write cycle
and enabling the entire memory to be written in less
than 2.5 seconds. The
FT28C512/513
also features
DATA Polling and Toggle Bit Polling, system software
support schemes used to indicate the early completion
of a write cycle. In addition, the
FT28C512/513
supports
the software data protection option.
A
7
–A
15
512Kbit
EEPROM
Array
A
0
–A
6
Y Buffers
Latches and
Decoder
I/O Buffers
and Latches
CE
OE
WE
V
CC
V
SS
Control
Logic and
Timing
I/O
0
–I/O
7
Data Inputs/Outputs
Rev A
1/25
2011
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Index Files: 1226  1981  2233  971  1713  25  40  45  20  35 
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