BUL54ASMD
MECHANICAL DATA
Dimensions in mm
0 .8 9
(0 .0 3 5 )
m in .
3 .7 0 (0 .1 4 6 )
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
4 .1 4 (0 .1 6 3 )
3 .8 4 (0 .1 5 1 )
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
3 .6 0 (0 .1 4 2 )
M a x .
1
3
2
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING (t
f
= 40ns)
• EXCEPTIONAL HIGH TEMPERATURE
PERFORMANCE
• HIGH ENERGY RATING
• EFFICIENT POWER SWITCHING
• MILITARY AND HI–REL OPTIONS
0 .7 6
(0 .0 3 0 )
m in .
1 0 .6 9 (0 .4 2 1 )
1 0 .3 9 (0 .4 0 9 )
1 6 .0 2 (0 .6 3 1 )
1 5 .7 3 (0 .6 1 9 )
9 .6
9 .3
1 1 .5
1 1 .2
7 (0
8 (0
8 (0
8 (0
.3 8
.3 6
.4 5
.4 4
1 )
9 )
6 )
4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
FEATURES
• Multi–base design for efficient energy
distribution across the chip resulting in
significantly improved switching and energy
ratings across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
SMD1 Package
Pad 1 – Base
Pad 2 – Collector
Pad 3 – Emitter
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
I
C(PK)
I
B
P
tot
T
stg
R
th
Semelab plc.
Collector – Base Voltage
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage
Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
case
= 25°C
Derate above 25°C when used on efficient heatsink
Operating and Storage Temperature Range
Thermal Resistance Junction – Case
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
1000V
500V
10V
2A
4A
0.8A
35W
0.2W/°C
–65 to 200°C
3.5°C/W
Prelim. 7/00
BUL54ASMD
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
V
CEO(sus)*
V
(BR)CBO*
V
(BR)EBO*
I
CEO*
I
CBO*
I
EBO*
Test Conditions
Min.
500
1000
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS
Collector – Emitter Sustaining Voltage I
C
= 100mA
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Emitter Cut–Off Current
Collector – Base Cut–Off Current
Emitter Cut–Off Current
I
C
= 1mA
I
E
= 1mA
I
B
= 0
I
E
= 0
I
C
= 0
I
C
= 100mA
I
C
= 0
V
CC
= 500V
V
CB
= 1000V
T
C
= 125°C
V
EB
= 5V
T
C
= 125°C
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
T
C
= 125°C
I
C
= 100mA
I
B
= 20mA
I
B
= 100mA
I
B
= 200mA
I
B
= 100mA
I
B
= 200mA
V
CE
= 4V
V
CE
= 4V
f = 1MHz
V
100
10
100
10
100
m
m
10
m
A
A
A
20
12
5
4
40
18
8
7
0.05
0.15
0.3
0.8
0.9
0.8
0.1
0.2
0.5
1.0
1.1
1.0
V
V
V
—
h
FE*
DC Current Gain
I
C
= 500mA
I
C
= 1A
V
CE(sat)*
Collector – Emitter Saturation Voltage I
C
= 500mA
I
C
= 1A
I
C
= 500mA
I
C
= 1A
I
C
= 500mA
I
C
= 100
m
A
f = 10MHz
V
CB
= 20V
I
E
= 0
V
CE
= 50V
V
BE(sat)*
V
BE(on)*
Base – Emitter Saturation Voltage
Base – Emitter On Voltage
DYNAMIC CHARACTERISTICS
f
T
C
ob
Transition Frequency
Output Capacitance
SECOND BREAKDOWN
Second Breakdown Collector Current
20
20
35
MHz
pF
I
S/B
t
on
t
s
t
f
t = 1s
0.8
0.08
2
0.04
0.2
4
0.1
A
SWITCHING CHARACTERISTICS (resistive load)
On Time
V
CC
= 150V
Storage Time
I
B1
= 0.2A
Fall Time
I
C
= 1A
I
B2
= –0.4A
m
s
* Pulse test t
p
= 300
m
s ,
d £
2%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 7/00
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