2N3250LEADFREE datasheet, PDF - EEWORLD Datasheet

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2N3250LEADFREE: DescriptionSmall Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-18,; CategoryDiscrete semiconductor The transistor; File Size537KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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2N3250LEADFREE Overview

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-18,

2N3250LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN (315)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Maximum off time (toff)	225 ns
Maximum opening time (tons)	70 ns
Base Number Matches	1

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2N3250

2N3251

2N3250A

2N3251A

w w w. c e n t r a l s e m i . c o m

SILICON

PNP TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N3250, 2N3251

series devices are silicon PNP transistors designed for

small signal, general purpose switching applications.

MARKING: FULL PART NUMBER

TO-18 CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

SYMBOL

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Continuous Collector Current

Power Dissipation

Power Dissipation (TC=25°C)

Operating and Storage Junction Temperature

TJ, Tstg

Thermal Resistance



Thermal Resistance



ELECTRICAL

SYMBOL

ICEV

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

2N3250

2N3251

2N3250A

2N3251A

5.0

200

360

1.2

-65 to +200

146

486

UNITS

°C

°C/W

CHARACTERISTICS:

(TA=25°C unless otherwise noted)

TEST CONDITIONS

MIN

VCE=40V, VEB=3.0V

IC=10μA (2N3250, 2N3251)

IC=10μA (2N3250A, 2N3251A)

IC=10mA (2N3250, 2N3251)

IC=10mA (2N3250A, 2N3251A)

IE=10μA

5.0

IC=10mA, IB=1.0mA

IC=50mA, IB=5.0mA

IC=10mA, IB=1.0mA

0.60

IC=50mA, IB=5.0mA

2N3250

2N3250A

MIN

MAX

150

MAX

0.25

0.50

0.90

1.20

2N3251

2N3251A

MIN

MAX

100

300

UNITS

hFE

VCE=1.0V,

IC=0.1mA

IC=1.0mA

IC=10mA

IC=50mA

R1 (4-March 2014)

2N3250LEADFREE Related Products

	2N3250LEADFREE	2N3250ALEADFREE	2N3251ALEADFREE	2N3251LEADFREE
Description	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-18,	Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-18,	Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-18,	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-18,
Is it lead-free?	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.2 A	0.2 A	0.2 A	0.2 A
Collector-emitter maximum voltage	40 V	60 V	60 V	40 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	15	15	30	30
JEDEC-95 code	TO-18	TO-18	TO-18	TO-18
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e3	e3	e3	e3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260	260	260	260
Polarity/channel type	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal surface	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	10	10	10	10
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	300 MHz	300 MHz
Maximum off time (toff)	225 ns	225 ns	250 ns	250 ns
Maximum opening time (tons)	70 ns	70 ns	70 ns	70 ns
Base Number Matches	1	1	1	1

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