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BSM400GB60DN2

Description
Insulated Gate Bipolar Transistor, 475A I(C), 600V V(BR)CES, N-Channel,
CategoryDiscrete semiconductor    The transistor   
File Size133KB,9 Pages
ManufacturerEUPEC [eupec GmbH]
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BSM400GB60DN2 Overview

Insulated Gate Bipolar Transistor, 475A I(C), 600V V(BR)CES, N-Channel,

BSM400GB60DN2 Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
Reach Compliance Codeunknown
Shell connectionISOLATED
Maximum collector current (IC)475 A
Collector-emitter maximum voltage600 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X7
Number of components2
Number of terminals7
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1400 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
VCEsat-Max2.6 V
BSM 400 GB 60 DN2
IGBT Power Module
Preliminary data
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 400 GB 60 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
T
C
= 25 °C
T
C
= 60 °C
V
CE
600V
I
C
475A
Package
HALF-BRIDGE 2
Ordering Code
C67070-A2120-A67
Symbol
V
CE
V
CGR
Values
600
600
Unit
V
V
GE
I
C
± 20
A
475
400
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 °C
T
C
= 60 °C
Power dissipation per IGBT
T
C
= 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage,
t
= 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
I
Cpuls
950
800
P
tot
1400
T
j
T
stg
R
thJC
R
thJCD
V
is
-
-
-
-
+ 150
-40 ... + 125
0.09
0.18
2500
20
11
F
40 / 125 / 56
sec
Vac
mm
K/W
°C
W
1
Oct-27-1997

BSM400GB60DN2 Related Products

BSM400GB60DN2 C67070-A2120-A67
Description Insulated Gate Bipolar Transistor, 475A I(C), 600V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 475A I(C), 600V V(BR)CES, N-Channel,
Maker EUPEC [eupec GmbH] EUPEC [eupec GmbH]
Reach Compliance Code unknown unknown
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 475 A 475 A
Collector-emitter maximum voltage 600 V 600 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 code R-XUFM-X7 R-XUFM-X7
Number of components 2 2
Number of terminals 7 7
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Transistor component materials SILICON SILICON
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