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BC121

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size219KB,7 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BC121 Overview

Transistor

BC121 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
Reach Compliance Codenot_compliant
Maximum collector current (IC)0.075 A
Collector-based maximum capacity11 pF
Collector-emitter maximum voltage5 V
ConfigurationSINGLE
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
VCEsat-Max0.4 V

BC121 Related Products

BC121 BC122 BC123
Description Transistor Transistor Transistor
Is it Rohs certified? incompatible incompatible incompatible
Maker Infineon Infineon Infineon
Reach Compliance Code not_compliant not_compliant not_compliant
Maximum collector current (IC) 0.075 A 0.075 A 0.075 A
Collector-based maximum capacity 11 pF 7 pF 7 pF
Collector-emitter maximum voltage 5 V 20 V 30 V
Configuration SINGLE SINGLE SINGLE
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.25 W 0.25 W 0.25 W
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz
VCEsat-Max 0.4 V 0.4 V 0.4 V
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