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BC879

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size173KB,4 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BC879 Overview

Transistor

BC879 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
Reach Compliance Codenot_compliant
Maximum collector current (IC)1 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)2000
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.8 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)200 MHz

BC879 Preview

NPN Silicon Darlington Transistors
BC 875
… BC 879
High current gain
q
Low collector-emitter saturation voltage
q
Complementary types: BC 876, BC 878
BC 880 (PNP)
q
Type
BC 875
BC 877
BC 879
Marking
Ordering Code
C62702-C853
C62702-C854
C62702-C855
Pin Configuration
1
2
3
E
C
B
Package
1)
TO-92
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
C
= 90 ˚C
2)
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - case
3)
1)
2)
Symbol
V
CE0
V
CB0
V
EB0
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Values
BC 875
45
60
Unit
BC 877
60
80
5
1
2
100
200
0.8 (1)
150
– 65 … + 150
W
˚C
mA
A
BC 879
80
100
V
R
th JA
R
th JC
156
75
K/W
3)
For detailed information see chapter Package Outlines.
If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm
×
10 mm large copper area for
the collector terminal,
R
thJA
= 125 K/W and thus
P
tot max
= 1 W at
T
A
= 25 ˚C.
Mounted on Al heat sink 15 mm
×
25 mm
×
0.5 mm.
Semiconductor Group
1
5.91
BC 875
… BC 879
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 50 mA
BC 875
BC 877
BC 879
Collector-base breakdown voltage
I
C
= 100
µ
A
BC 875
BC 877
BC 879
Emitter-base breakdown voltage,
I
E
= 100
µ
A
Collector cutoff current
V
CE
= 0.5
×
V
CEmax
Collector cutoff current
V
CB
=
V
CBmax
V
CB
=
V
CBmax
,
T
A
= 150 ˚C
Emitter cutoff current,
V
EB
= 4 V
DC current gain
I
C
= 150 mA;
V
CE
= 10 V
1)
I
C
= 500 mA;
V
CE
= 10 V
1)
Collector-emitter saturation voltage
1)
I
C
= 500 mA,
I
B
= 0.5 mA
I
C
= 1 A,
I
B
= 1 mA
Base-emitter saturation voltage
1)
I
C
= 1 A;
I
B
= 1 mA
AC characteristics
Transition frequency
I
C
= 200 mA,
V
CE
= 5 V,
f
= 20 MHz
f
T
150
MHz
V
(BR)CE0
45
60
80
V
(BR)CB0
60
80
100
V
(BR)EB0
I
CE0
I
CB0
I
EB0
h
FE
1000
2000
V
CEsat
V
BEsat
1.3
1.8
2.2
V
100
20
100
nA
µ
A
nA
5
500
nA
V
Values
typ.
max.
Unit
1)
Pulse test:
t
300
µ
s,
D
2 %.
Semiconductor Group
2
BC 875
… BC 879
Total power dissipation
P
tot
=
f
(T
A
;
T
C
)
Collector cutoff current
I
CB0
=
f
(T
A
)
V
CB
= 100 V
Permissible pulse load
R
thJA
=
f
(t )
p
DC current gain
h
FE
=
f
(T
A
)
V
CE
= 10 V
Semiconductor Group
3
BC 875
… BC 879
DC current gain
h
FE
=
f
(I
C
)
V
CE
= 10 V,
T
A
= 25 ˚C
Transition frequency
f
T
=
f
(I
C
)
V
CE
= 5 V,
f
= 20 MHz
Collector-emitter saturation voltage
V
CEsat
=
f
(I
C
)
Parameter =
I
B
,
T
A
= 25 ˚C
Base-emitter saturation voltage
V
BEsat
=
f
(I
C
)
Parameter =
I
B
,
T
A
= 25 ˚C
Semiconductor Group
4

BC879 Related Products

BC879 BC877 BC875
Description Transistor Transistor Transistor
Is it Rohs certified? incompatible incompatible incompatible
Maker Infineon Infineon Infineon
Reach Compliance Code not_compliant not_compliant not_compliant
Maximum collector current (IC) 1 A 1 A 1 A
Configuration DARLINGTON DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 2000 2000 2000
JESD-609 code e0 e0 e0
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.8 W 0.6 W 0.6 W
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 200 MHz 200 MHz 200 MHz
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