BS170-18 datasheet, PDF - EEWORLD Datasheet

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BS170-18: DescriptionSmall Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA; CategoryDiscrete semiconductor The transistor; File Size173KB，6 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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BS170-18 Overview

Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

BS170-18 Parametric

Parameter Name	Attribute value
Maker	Vishay
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	0.5 A
Maximum drain-source on-resistance	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-226AA
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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BS170-18 Related Products

	BS170-18	2N7002TT2	2N7000L18	2N7000L-18	2N7002TT1
Description	Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA	Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236	200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA	Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA	Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
Reach Compliance Code	unknown	unknow	unknow	unknow	unknow
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V	60 V	60 V	60 V
Maximum drain current (ID)	0.5 A	0.115 A	0.2 A	0.2 A	0.115 A
Maximum drain-source on-resistance	5 Ω	7.5 Ω	5 Ω	5 Ω	7.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-226AA	TO-236	TO-226AA	TO-226AA	TO-236
JESD-30 code	O-PBCY-T3	R-PDSO-G3	O-PBCY-T3	O-PBCY-T3	R-PDSO-G3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	RECTANGULAR	ROUND	ROUND	RECTANGULAR
Package form	CYLINDRICAL	SMALL OUTLINE	CYLINDRICAL	CYLINDRICAL	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	YES	NO	NO	YES
Terminal form	THROUGH-HOLE	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING
Terminal location	BOTTOM	DUAL	BOTTOM	BOTTOM	DUAL
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
package instruction	CYLINDRICAL, O-PBCY-T3	SMALL OUTLINE, R-PDSO-G3	-	CYLINDRICAL, O-PBCY-T3	SMALL OUTLINE, R-PDSO-G3
ECCN code	EAR99	EAR99	-	EAR99	EAR99
transistor applications	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING
Maximum feedback capacitance (Crss)	-	5 pF	5 pF	5 pF	5 pF
JESD-609 code	-	e0	e0	e0	e0
Terminal surface	-	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Base Number Matches	-	1	1	1	1

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