U3660M-B
Baseband Delay Line (64
m
s)
Description
The U3660M is an integrated baseband delay line circuit. It provides a delay of 64
m
s for the color difference signals,
±(R-Y)
and
±(B-Y),
in multi-standard TVs.
Features
D
One line delay time, addition of delayed and non-
delayed output signals
D
Adjustment-free application, VCO without external
components
D
Line-locked by the sandcastle pulse
D
No crosstalk between SECAM colour carriers
(diaphoty)
D
Handles negative or positive colour-difference input
signals
D
Comb filtering functions for NTSC colour-difference
signals
D
Clamping of ac-coupled input signals
[±(R-Y)
and
±(B-Y)]
D
Correction of phase errors in the PAL system
Block Diagram
Ref
13
Bias
"
(B–Y) 14
"
(R–Y) 16
Vref
Clamping
Line memory
Shift register
Clamping
S+H
S+H
LPF
+
12
"
(B–Y)
"
(R–Y)
Line memory
Vref
+
11
LPF
3 MHz
fsc
V
DD2
GND2
1
SC detector
Control
9
V
DD1
GND1
Clock generator
PLL
3
5
10
94 8223
SSC pulse
Figure 1. Block diagram
TELEFUNKEN Semiconductors
Rev. A2, 13-Dec-96
1 (7)
U3660M-B
Pin Description
V
DD2
NC
GND2
NC
SC
NC
NC
NC
1
2
3
4
5
6
7
8
95 11252
16 V
i(R-Y)
15 NC
14 V
i(B-Y)
13 R
ref
12 V
O(B-Y)
11 V
O(R-Y)
10 GND1
9
V
DD1
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Symbol
V
DD2
NC
GND2
NC
SC
NC
NC
NC
V
DD1
GND1
V
O(R-Y)
V
O(B-Y)
R
ref
V
i(B-Y)
NC
V
i(R-Y)
Function
Supply voltage for digital part
Not connected
Ground for digital part
Not connected
Sandcastle pulse input
Not connected
Not connected
Not connected
Supply voltage for analog part
Ground for analog part
±(R-Y)
output signal
±(B-Y)
output signal
Resistor for internal reference
±(B-Y)
input signal
Not connected
±(R-B)
input signal
Figure 2. Connection diagram
Absolute Maximum Ratings
Parameters
Supply voltage (Pin 9)
Supply voltage (Pin 1)
Voltage at Pins 5, 11, 12, 14 and 16
Output current, Pins 11 and 12
Max. power dissipation
Storage temperature range
Electrostatic protection
*
for input/output pins
*
Symbol
V
DD1
V
DD2
V
n
I
out
P
T
stg
Value
–0.5 to +7
–0.5 to +7
–0.5 to V
S
20
1.1
–25 to +150
±200
Unit
V
V
V
mA
W
°C
V
MIL standard 883D, method 3015.7 machine model (all power pins connected together).
Operating Range
Parameters
Supply voltage range (Pins 1 and 9)
Ambient temperature range
Symbol
V
S
T
amb
Value
4.5 to 6.0
0 to +70
Unit
V
°C
Thermal Resistance
Parameters
Junction ambient
Symbol
R
thJA
Value
80
Unit
K/W
2 (7)
TELEFUNKEN Semiconductors
Rev. A2, 13-Dec-96
U3660M-B
Electrical Characteristics
V
DD
= 5.0 V, T
amb
= +25°C, reference point Pin 3 and Pin 10 connected together,
super-sandcastle frequency of 15.625 kHz; unless otherwise specified.
Parameters
Test Conditions / Pins
DC-supply
Pins 1 and 9
Supply voltage
Pin 9
(analog part)
Supply voltage
Pin 1
(digital part)
Supply current
Pin 9
(analog part)
Supply current
Pin 1
(digital part)
Power dissipation
Colour-difference input signals
Pins 14 and 16
Input signal
(peak-to-peak value)
±(R-Y)
PAL and NTSC
Pin 16
±(B-Y)
PAL and NTSC
Pin 14
±(R-Y)
SECAM
Pin 16
±(B-Y)
SECAM
Pin 14
Input resistance
Pins 14 and 16
Input capacitance
Pins 14 and 16
Input clamping voltage
non color input level
during clamping,
Pins 14 and 16
Colour-difference output signals
Pins 11 and 12
Output signal
(peak-to-peak value)
±(R-Y)
at Pin 11
all standards
±(B-Y)
at Pin 12
all standards
Ratio of output amplitudes
at equal input signals
DC output voltage
Pins 11 and 12
Output resistance
Pins 11 and 12
Gain for PAL and NTSC
ratio V
O
/V
i
ratio V
O
/V
i
Gain for SECAM
Ratio of output signals on
V
i 14,16
= 1.33 V
Pins 11 and 12 for adjacent (peak-to-peak value)
time samples at constant in- SECAM signals
put signals
Noise voltage
(RMS value, Pins 11
and 12)
Delay of delayed signals
Delay of non-delayed
signals
V
i 14,16
= 0
R
Gen
< 300
W
f = 10 kHz to 1 MHz
Symbol
V
DD1
V
DD2
I
S1
I
S2
P
Min.
4.5
4.5
Typ.
5.0
5.0
3.5
1
30
Max.
6.0
6.0
8.0
2
60
Unit
V
V
mA
mA
mW
V
i
V
i
V
i
V
i
R
14, 16
C
14, 16
V
14
,
16
0.525
0.665
1.05
1.33
1.0
1.0
2.0
2.0
40
10
1.45
V
V
V
V
k
W
pF
V
V
O
V
O
V11
V12
V
11, 12
R
11, 12
G
v
G
v
V
(n)
V
(n+1)
–0.4
1.05
1.33
0
3.0
+0.4
V
V
dB
5.5
–1.0
–0.1
6.0
0
400
6.5
+1.0
+0.1
W
dB
dB
dB
V
V
noise
1.2
mV
t
d
t
d
63.94
64.0
85
64.06
m
s
ns
TELEFUNKEN Semiconductors
Rev. A2, 13-Dec-96
3 (7)
U3660M-B
Parameters
Transient time of delayed
signal at Pin 11 respec-
tively Pin 12
Transient time of non-
delayed signal at Pin 11
respectively Pin 12
Sandcastle pulse input
Sandcastle frequency
Top pulse voltage
Test Conditions / Pins
300 ns transient of SECAM
input signal, C
load
= 22 pF
300 ns transient of SECAM
input signal, C
load
= 22 pF
Pin 5
the leading edge of the
burst-key pulse is used for
timing
f
SC
V
5
14.0
3
15.625
17.0
7
kHz
V
Symbol
t
tr
Min.
Typ.
550
Max.
Unit
ns
t
tr
350
ns
Internal slicing level
Input current
Input capacitance
V
slice
I
5
C
5
V
5
–2.0
V
5
–1.5
V
5
–1.0
10
10
V
m
A
pF
+12 V
560
W
5V1
10
W
10
W
47
m
F
47
m
F
22 nF
–(R–Y) 1 nF
16
Chroma
decoder
–(B–Y) 1 nF
1
9
22 nF
nc
–(R–Y)
2,4,6,7,8,15
11
U 3660 M
14
5
13
3
10
–(B–Y)
12
SC pulse
11 k
W
6.8 k
W
Rref
1 M
W
220 nF
94 8280
Figure 3. Typical application circuit
4 (7)
TELEFUNKEN Semiconductors
Rev. A2, 13-Dec-96
U3660M-B
Internal Pin Circuits
11,12
14,16
94 8678
94 8676
Figure 4. Colour difference signal inputs
Figure 5. Colour difference signal outputs
94 8675
13
5
94 8677
Figure 6. Sandcastle pulse input
Figure 7. Internal reference voltage
TELEFUNKEN Semiconductors
Rev. A2, 13-Dec-96
5 (7)
京公网安备 11010802033920号
EEWORLD
