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BUK553-50B

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size499KB,5 Pages
ManufacturerNorth American Philips Discrete Products Div
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BUK553-50B Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

BUK553-50B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNorth American Philips Discrete Products Div
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)20 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)75 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)

BUK553-50B Related Products

BUK553-50B BUK553-50A
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Is it Rohs certified? incompatible incompatible
Maker North American Philips Discrete Products Div North American Philips Discrete Products Div
Reach Compliance Code unknown unknown
Configuration Single Single
Maximum drain current (Abs) (ID) 20 A 21 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0 e0
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 75 W 75 W
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)

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