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BUK866-400IZT/R

Description
Insulated Gate Bipolar Transistor, 20A I(C), 500V V(BR)CES, N-Channel,
CategoryDiscrete semiconductor    The transistor   
File Size463KB,8 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric View All

BUK866-400IZT/R Overview

Insulated Gate Bipolar Transistor, 20A I(C), 500V V(BR)CES, N-Channel,

BUK866-400IZT/R Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)20 A
Collector-emitter maximum voltage500 V
Maximum landing time (tf)10000 ns
Gate emitter threshold voltage maximum2 V
Gate-emitter maximum voltage20 V
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
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