LAB
MECHANICAL DATA
Dimensions in mm
SEME
BUL72B - LCC4
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
≈
2.16 (0.085)
1.39 (0.055)
1.02 (0.040)
1.27 (0.050)
1.07 (0.040)
9.14 (0.360)
8.64 (0.340)
12 13 14 15 16
11
7.62 (0.300)
7.12 (0.280)
17
18
1
2
0.76 (0.030)
0.51 (0.020)
10
9
8
7
6
5
4
3
1.65 (0.065)
1.40 (0.055)
0.33 (0.013)
Rad.
0.08 (0.003)
•
•
•
•
SEMEFAB DESIGNED AND DIFFUSED DIE
HIGH VOLTAGE
FAST SWITCHING
HIGH ENERGY RATING
1.39 (0.055)
1.15 (0.045)
0.43 (0.017)
0.18 (0.007 Rad.
FEATURES
LCC4
TRANSISTOR
BASE
COLLECTOR
EMITTER
PINS
4,5
1,2,15,16,17,18
6,7,8,9,10,11,12,13
•
Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch
to batch.
• Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
I
C(PK)
I
B
P
tot
R
q
j-c
T
stg
Semelab plc.
Collector – Base Voltage(I
E
=0)
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Continuous Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
case
= 25°C
Thermal Resistance Junction to Case
Operating and Storage Temperature Range
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
200V
100V
10V
8A
12A
2A
5W
25°C/W
–55 to +150°C
Prelim. 6/00
LAB
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
V
CEO(sus)
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
SEME
BUL72B - LCC4
Test Conditions
Min.
100
250
10
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS
Collector – Emitter Sustaining Voltage I
C
= 10mA
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Base Cut–Off Current
Collector – Emitter Cut–Off Current
Emitter Cut–Off Current
I
C
= 1mA
I
E
= 1mA
V
CB
= 250V
T
C
= 125°C
I
B
= 0
V
EB
= 9V
I
C
= 0
I
C
= 0.3A
I
C
= 3A
I
C
= 5A
I
C
= 1A
T
C
= 125°C
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
T
C
= 125°C
I
B
= 0.1A
I
B
= 0.3A
I
B
= 0.5A
I
B
= 0.3A
I
B
= 0.5A
V
CE
= 4V
f = 1MHz
V
CE
= 100V
V
10
100
100
10
100
m
A
m
A
m
A
30
25
20
80
60
50
0.2
0.5
0.8
1.1
1.3
20
44
V
V
—
h
FE*
DC Current Gain
V
CE(sat)*
Collector – Emitter Saturation Voltage I
C
= 3A
I
C
= 5A
I
C
= 3A
I
C
= 5A
I
C
= 0.2A
V
CB
= 10V
V
BE(sat)*
Base – Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
Transition Frequency
Output Capacitance
f
t
C
ob
MHz
pF
* Pulse test t
p
= 300
m
s ,
d
< 2%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 6/00
Microcontroller MCU
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