GBU4A-GBU4M
Silicon Bridge Rectifiers
GBU
FEATURES
Ideal for printed circuit board
Reliable low cost construction utilizing molded plastic technique
Plastic materrial has U/L flammability classification 94V-O
Mounting position: Any
Glass passivated chip junctions
Dim
A
B
C
C1
E
F
F1
I1
I2
K
P
Min
22.00
18.40
3.40
2.50
0.40
17.00min
1.70
2.30
0.95
4.70
Max
22.40
18.80
3.95
3.00
0.60
2.30
2.60
1.25
5.30
R1.9ypical
All Dimensions in mm
Maximum Ratings
(@TA = 25°C unless otherwise specified)
Characteristic
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward Output current
@T
C
=100℃
(note1)
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load
I²t Rating for fusing @Tj=25℃
I²t
9933
A²S
I
FSM
150.0
A
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
GBU4A
50
35
50
GBU4B
100
70
100
GBU4D
200
140
200
GBU4G
400
280
400
4.0
GBU4J
600
420
600
GBU4K
800
560
800
GBU4M
1000
700
1000
UNITS
V
V
V
A
Thermal Characteristics
Characteristic
Typical junction capacitance perelement
(note 3)
Typical thermal resistance (note2)
(note1)
Operating junction temperature range
Storage temperature range
Symbol
C
J
GBU4A
GBU4B
GBU4D
GBU4G
GBU4J
GBU4K
45
22.0
4.0
GBU4M
UNITS
100
pF
℃/W
℃
℃
R
θJA
R
θJC
T
J
T
STG
- 55 ---- + 150
- 55 ---- + 150
Electrical Characteristics
(@TA = 25°C unless otherwise specified)
Characteristic
Maximum instantaneous forward voltage
@2.0A
@4.0A
Maximum reverse current @T
A
=25
℃
at rated DC blocking voltage @T
A
=125℃
I
R
V
F
1.0
1.1
5.0
50
V
Symbol
GBU4A
GBU4B
GBU4D
GBU4G
GBU4J
GBU4K
GBU4M
UNITS
μ
A
NOTE: 1. Unit case mounted on 1.6x1.6x0.06" thick (4.0x4.0x0.15cm) AI. Plate.
2. Units mounted on P.C.B. with 0.5x0.5" (12x12mm) copper pads and 0.375" (9.5mm) lead length.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0 volts.
ht
t
p
:
//
Revision:20170701-P1
www.lgesemi
.c
o
m
mail:lge@lgesemi.com
GBU4A-GBU4M
Silicon Bridge Rectifiers
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
5
AVERAGE FORWARD CURRENT (A)
140
120
CAPACITANCE (pF)
100
80
60
40
20
0
0
25
50
75
100
125
150
0.1
1
10
100
1000
CASE TEMPERATURE (
°
C)
REVERSE VOLTAGE (V)
GBU405 - GBU407
f=1.0MHz
Vslg=50mVp-p
GBU401 - GBU404
Fig.2 Typical Junction Capacitance
4
3
2
1
RESISTER OR
INDUCTIVE LOAD
WITH HEATSINK
0
Fig.3 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
1000
100
Fig.4 Typical Forward Characteristics
100
T
J
=125
°
C
10
GBU401 - GBU404
GBU405 - GBU407
1
Pulse width=300μs
1% duty cycle
10
1
0.1
T
J
=25
°
C
0
20
40
60
80
100
0.01
0.1
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
FORWARD VOLTAGE (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
ht
t
p
:
//
Revision:20170701-P1
www.lgesemi
.c
o
m
mail:lge@lgesemi.com
GBU4A-GBU4M
Silicon Bridge Rectifiers
Fig.5 Maximum Non-repetitive Forward Surge Current
175
150
125
100
75
50
25
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
8.3ms Single Half Sine Wave
PEAK FORWARD SURGE CURRENT (A)
Device
GBU4A--GBU4M
Package
GBU
Shipping
500 Units/Box
ht
t
p
:
//
Revision:20170701-P1
www.lgesem i
.c
o
m
mail:lge@lgesemi.com
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