TLP180
TOSHIBA Photocoupler
GaAs Ired & Photo−Transistor
TLP180
Telephone Use Equipment
Programmable Controllers
AC / DC−Input Module
Telecommunication
The TOSHIBA mini flat coupler TLP180 is a small outline coupler, suitable
for surface mount assembly.
TLP180 consist of a photo transistor, optically coupled to a gallium
arsenide infrared emitting diode connected inverse parallel, and can
operate directly by AC input current.
•
•
•
•
•
Collector-emitter voltage: 80 V (min)
Current transfer ratio: 50% (min)
Rank GB: 100% (min)
Isolation voltage: 3750 Vrms (min)
UL recognized: UL1577, file No. E67349
BSI approved: BS EN60065:2002, certificate no.8285
BS EN60950-1:2002, certificate no.8286
TOSHIBA
11−4C1
Weight: 0.09 g (typ.)
Unit in mm
Current Transfer Ratio
Classi-
fication(*1)
Standard
Rank Y
Rank GR
Rank BL
Rank GB
Current Transfer Ratio
I
F
= 5 mA, V
CE
= 5 V, Ta = 25℃
Min
Max
50
50
100
200
100
600
150
300
600
600
Marking Of
Classification
Blank, YE, GR, BL , GB
YE
GR
BL
GB
Pin Configuration
(top view)
1
3
1: Anode, Cathode
3: Cathode, Anode
4: Emitter
6: Collector
6
4
＊The
product with the Rank Y and BL are limited in production.
For details, please contact your nearest Toshiba sales representative.
(*1): Ex. rank GB: TLP180 (GB)
(Note) Application type name for certification test,
please use standard product type name, i.e.
TLP180(GB): TLP180
1
2009-01-19
TLP180
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Forward current
LED
Forward current detating (Ta≥53°C)
Pulse forward current
Junction temperature
Collector−emitter voltage
Emitter−collector voltage
Detector
Collector current
Power dissipation
Power dissipation derating (Ta
≥
25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Total package power dissipation
Total package power dissipation derating (Ta
≥
25°C)
Isolation voltage (AC,1 min., R.H.
≤
60%)
(Note 2)
(Note 1)
Symbol
I
F(RMS)
ΔI
F
/ °C
I
FP
T
j
V
CEO
V
ECO
I
C
P
C
ΔP
C
/ °C
T
j
T
stg
T
opr
T
sol
P
T
ΔP
T
/ °C
BV
S
Rating
±50
−0.7
±1
125
80
7
50
150
−1.5
125
−55
to 125
−55
to 100
260
200
−2.0
3750
Unit
mA
mA / °C
A
°C
V
V
mA
mW
mW / °C
°C
°C
°C
°C
mW
mW / °C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width
≤
100
μs,f=100
Hz
Note 2: Device considered a two terminal device: Pins 1 and 3 shorted together and 4 and 6 shorted together.
Recommended Operating Conditions
Characteristic
Supply voltage
Forward current
Collector current
Operating temperature
Symbol
V
CC
I
F(RMS)
IC
T
opr
Min
―
―
―
−25
Typ.
5
16
1
―
Max
48
20
10
85
Unit
V
mA
mA
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2
2009-01-19
TLP180
Electrical Characteristics
(Ta = 25°C)
Characteristic
LED
Forward voltage
Capacitance
Collector−emitter
breakdown voltage
Emitter−collector
breakdown voltage
Detector
Symbol
V
F
C
T
V
(BR) CEO
V
(BR) ECO
Test Condition
I
F
= ±10 mA
V = 0, f = 1 MHz
I
C
= 0.5 mA
I
E
= 0.1 mA
V
CE
= 48 V (ambient light
below 1000
ℓx)
(Note 3)
V
CE
= 48 V (ambient light
Ta = 85°C
below 1000
ℓx)
(Note 3)
V = 0, f = 1 MHz
Min
1.0
―
80
7
―
―
―
Typ.
1.15
60
―
―
0.01
(2)
2
(4)
10
Max
1.3
―
―
―
0.1
(10)
50
(50)
―
Unit
V
pF
V
V
μA
μA
pF
Collector dark current
I
CEO
Capacitance
(collector to emitter)
C
CE
Note 3: Please use standard electric lamp to light up the device's marking surface.
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Current transfer ratio
Symbol
I
C
/ I
F
Test Condition
I
F
= ±5 mA, V
CE
= 5 V
Rank GB
IF = ±1 mA, V
CE
= 0.4 V
Rank GB
I
C
= 2.4 mA, I
F
= ±8 mA
Collector−emitter
saturation voltage
Off−state collector current
CTR symmetry
V
CE (sat)
I
C
= 0.2 mA, I
F
= ±1 mA
Rank GB
I
C(off)
I
C (ratio)
V
F
= ± 0.7 V, V
CE
= 48 V
I
C
(I
F
=
−5
mA) / I
C
(I
F
= 5 mA)
(Note 4)
Min
50
100
—
30
—
—
—
—
0.33
Typ.
—
—
60
—
—
0.2
—
1
1
Max
600
600
—
—
0.4
—
0.4
10
3
μA
—
V
Unit
%
Saturated CTR
I
C
/ I
F (sat)
%
I (I
=
I , V
=
5V)
Note 4: I
C
(ratio)=
C2 F F2 CE
IC1(IF
=
IF1, VCE
=
5V)
I
C1
I
F1
I
C2
I
F2
V
CE
3
2009-01-19
TLP180
Isolation Characteristics
(Ta = 25°C)
Characteristic
Capacitance input to output
Isolation resistance
Symbol
C
S
R
S
Test Condition
V
S
= 0 V, f = 1 MHz
V
S
= 500 V, R.H.
≤
60%
AC, 1 minute
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
Min
―
5×10
10
Typ.
0.8
10
14
Max
―
―
―
―
―
Unit
pF
Ω
V
rms
V
dc
3750
―
―
―
10000
10000
Switching Characteristics
(Ta = 25°C)
Characteristic
Rise time
Fall time
Turn−on time
Turn−off time
Turn−on time
Storage time
Turn−off time
Symbol
t
r
t
f
t
ON
t
OFF
t
ON
t
s
t
OFF
R
L
= 1.9 kΩ
V
CC
= 5 V, I
F
= ±16 mA
(Fig.1)
V
CC
= 10 V, I
C
= 2 mA
R
L
= 100
Ω
Test Condition
Min
―
―
―
―
―
―
―
Typ.
2
3
3
3
2
25
40
Max
―
―
―
―
―
―
―
μs
μs
Unit
Fig. 1: Switching time test circuit
I
F
R
L
I
F
t
s
V
CE
t
ON
V
CC
4.5V
0.5V
t
OFF
V
CC
V
CE
4
2009-01-19
TLP180
I
F
– Ta
100
200
P
C
– Ta
Allowable forward current
I
F
(mA)
80
60
40
Allowable collector power
dissipation P
C
(mW)
0
20
40
60
80
100
120
160
120
80
20
40
0
−20
0
−20
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
I
FP
– D
R
3000
Pulse width
≤
100
μs
Ta = 25°C
100
I
F
– V
F
Pulse forward current I
FP
(mA)
I
F
(mA)
Forward current
−
3
−
2
−1
0
1000
500
300
10
1
100
50
30
0.1
10
10
0.01
85°C
0.001
0
25
°C
0.8
−25°C
10
10
10
Duty cycle
ratio D
R
0.4
1.2
1.6
2
Forward
voltage V
F
(V)
ΔV
F /
ΔTa
– I
F
−3.2
1000
I
FP
– V
FP
Pulse forward current I
FP
(mA)
500
300
Forward voltage temperature
coefficient
ΔV
F /
ΔTa
(mV / °C)
−2.8
−2.4
−2.0
−1.6
−1.2
−0.8
−0.4
0.1
100
50
30
10
5
3
1
0.6
Pulse width
≤
10
μs
Repetitive
Frequency = 100 Hz
Ta = 25°C
0.3 0.5
1
3
5
10
30
50
1.0
1.4
1.8
2.2
2.6
3.0
Forward
current
I
F
(mA)
Pulse forward
voltage
V
FP
(V)
5
2009-01-19
京公网安备 11010802033920号
EEWORLD
