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CLY15

Description
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET
CategoryDiscrete semiconductor    The transistor   
File Size149KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

CLY15 Overview

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET

CLY15 Parametric

Parameter NameAttribute value
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage9 V
Maximum drain current (ID)5 A
FET technologyJUNCTION
highest frequency bandS BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeDEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE
GaAs FET
Data Sheet
Power amplifier for mobile phones
For frequencies from 400 MHz to 2.5 GHz
Operating voltage range: 2.7 to 6 V
P
OUT
at
V
D
= 3 V,
f
= 1.8 GHz typ. 31.5 dBm
Efficiency better 50%
CLY 15
ESD: Electrostatic discharge
sensitive device,
observe handling precautions!
SOT-223
Type
Marking
Ordering Code
(taped)
Q62702-L99
Pin Configuration
1
G
2
S
3
D
4
S
Package
CLY 15
CLY 15
P-SOT223-4-2
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current
Channel temperature
Storage temperature
Total power dissipation (
T
S
80
°
C)
T
S
: Temperature at soldering point
Thermal Resistance
Parameter
Channel-soldering point (GND)
Symbol
Value
< 15
Unit
K/W
Symbol
Value
9
12
–6
5
150
– 55 … + 150
4.7
Unit
V
V
V
A
°C
°C
W
V
DS
V
DG
V
GS
I
D
T
Ch
T
stg
P
tot
R
thChS
Data Sheet
1
2001-01-01
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