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2SA1576UBR

Description
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, UMT3F, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size95KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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2SA1576UBR Overview

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, UMT3F, 3 PIN

2SA1576UBR Parametric

Parameter NameAttribute value
Parts packaging codeSC-85
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)180
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)140 MHz
Base Number Matches1
General purpose small signal amplifier
(50V, 0.15A)
2SA1576UB
Applications
General purpose small signal amplifier.
Dimensions
(Unit : mm)
UMT3F
2.0
2.1
1.25 0.425
Features
1) Excellent h
FE
linearity.
2) Complements the 2SC4081UB.
0.32
(3)
0.9
0.53
Each lead has same dimensions
0.425
Structure
PNP silicon epitaxial planar transistor.
(1) Base
(2) Emitter
(3) Collector
∗ =
Denotes h
FE
(1)
(2)
0.13
0.65 0.65
1.3
Abbreviated symbol : F
Absolute
maximum ratings
(Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1
Pw=1ms Single pulse
∗2
Each terminal mounted on a recommended land
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
Tj
Tstg
∗1
∗2
Limits
−60
−50
−6
−150
−200
200
150
−55
to
+150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Electrical
characteristics
(Ta=25C)
Parameter
Symbol
Min.
−50
−60
−6
120
Typ.
140
4.0
Max.
−100
−100
−0.5
390
5.0
Unit
V
V
V
nA
nA
V
MHz
pF
I
C
=
−1mA
I
C
=
−50μA
I
E
=
−50μA
V
CB
=
−60V
V
EB
=
−6V
I
C
/I
B
=
−50mA/−5mA
V
CE
=
−6V,
I
C
=
−1mA
V
CE
=
−12V,
I
E
=
2mA, f
=
100MHz
V
CB
=
−12V,
I
E
=
0A, f
=
1MHz
Conditions
Collector-emitter breakdown voltage BV
CEO
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
1/2
2010.09 - Rev.D
0.53

2SA1576UBR Related Products

2SA1576UBR 2SA1576UBQ
Description Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, UMT3F, 3 PIN Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, UMT3F, 3 PIN
Parts packaging code SC-85 SC-85
package instruction SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3
Contacts 3 3
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.15 A 0.15 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 180 120
JESD-30 code R-PDSO-F3 R-PDSO-F3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form FLAT FLAT
Terminal location DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 140 MHz 140 MHz
Base Number Matches 1 1
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