DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD448012-X
8M-BIT CMOS STATIC RAM
512K-WORD BY 16-BIT
EXTENDED TEMPERATURE OPERATION
Description
The
µ
PD448012-X is a high speed, low power, 8,388,608 bits (524,288 words by 16 bits) CMOS static RAM.
The
µ
PD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.
The
µ
PD448012-X is packed in 48-pin PLASTIC TSOP (I) (Normal bent).
Features
•
524,288 words by 16 bits organization
•
Fast access time: 55, 70, 85, 100, 120 ns (MAX.)
•
Byte data control: /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)
•
Low voltage operation
(B version: V
CC
= 2.7 to 3.6 V, C version: V
CC
= 2.2 to 3.6 V)
•
Low V
CC
data retention : 1.0 V (MIN.)
•
Operating ambient temperature: T
A
= –25 to +85°C
•
Output Enable input for easy application
•
Two Chip Enable inputs: /CE1, CE2
Part number
Access time
ns (MAX.)
Operating supply Operating ambient
voltage
V
temperature
°C
−25
to +85
At operating
mA (MAX.)
45
Note
Supply current
At standby
At data retention
µ
A (MAX.)
15
µ
A (MAX.)
6
µ
PD448012-BxxX
µ
PD448012-CxxX
55, 70, 85, 100
70, 85, 100, 120
2.7 to 3.6
2.2 to 3.6
45
Note
Cycle time
≥
70 ns,
µ
PD448012-B55X : 50 mA
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14466EJ5V0DS00 (5th edition)
Date Published July 2001 NS CP (K)
Printed in Japan
The mark
5
shows major revised points.
©
1999
µ
PD448012-X
Ordering Information
Part number
Package
Access time
ns (MAX.)
Operating
supply voltage
V
Operating
temperature
°C
−25
to +85
B version
Remark
µ
PD448012GY-B55X-MJH
µ
PD448012GY-B70X-MJH
µ
PD448012GY-B85X-MJH
µ
PD448012GY-B10X-MJH
µ
PD448012GY-C70X-MJH
µ
PD448012GY-C85X-MJH
µ
PD448012GY-C10X-MJH
µ
PD448012GY-C12X-MJH
48-pin PLASTIC TSOP (I)
(12x18) (Normal bent)
55
70
85
100
70
85
100
120
2.7 to 3.6
2.2 to 3.6
C version
2
Data Sheet M14466EJ5V0DS
µ
PD448012-X
Pin Configuration (Marking Side)
/xxx indicates active low signal.
48-pin PLASTIC TSOP (I) (12x18) (Normal bent)
[
µ
PD448012GY-BxxX-MJH ]
[
µ
PD448012GY-CxxX-MJH ]
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
/WE
CE2
NC
/UB
/LB
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
NC
GND
I/O16
I/O8
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
V
CC
I/O12
I/O4
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
/OE
GND
/CE1
A0
A0 - A18
: Address inputs
I/O1 - I/O16 : Data inputs / outputs
/CE1, CE2
/WE
/OE
/LB, /UB
V
CC
GND
NC
: Chip Enable 1, 2
: Write Enable
: Output Enable
: Byte data select
: Power supply
: Ground
: No Connection
Remark
Refer to
Package Drawing
for the 1-pin index mark.
Data Sheet M14466EJ5V0DS
3
µ
PD448012-X
Block Diagram
V
CC
GND
A0
A18
Address
buffer
Row
decoder
Memory cell array
8,388,608 bits
I/O1 - I/O8
I/O9 - I/O16
Input data
controller
Sense amplifier /
Switching circuit
Column decoder
Output data
controller
Address buffer
/CE1
CE2
/LB
/UB
/WE
/OE
Truth Table
/CE1
CE2
/OE
/WE
/LB
/UB
Mode
I/O1 - I/O8
H
×
L
×
L
H
×
×
H
L
×
×
H
H
×
×
×
L
L
H
×
L
L
L
H
×
×
×
×
H
×
×
×
L
H
L
L
H
L
H
Output disable
Word read
Lower byte read
Upper byte read
Word write
Lower byte write
Upper byte write
Not selected
High impedance
D
OUT
D
OUT
High impedance
D
IN
D
IN
High impedance
High impedance
High impedance
D
OUT
High impedance
D
OUT
D
IN
High impedance
D
IN
High impedance
I
SB
I
CCA
Not selected
High impedance
I/O
I/O9 - I/O16
High impedance
I
SB
Supply current
Remark
×
: V
IH
or V
IL
4
Data Sheet M14466EJ5V0DS
µ
PD448012-X
Electrical Specifications
Absolute Maximum Ratings
Parameter
Supply voltage
Input / Output voltage
Operating ambient temperature
Storage temperature
Symbol
V
CC
V
T
T
A
T
stg
–0.5
Note
Condition
–0.5
Rating
Note
Unit
V
V
°C
°C
to +4.0
to V
CC
+ 0.4 (4.0 V MAX.)
–25 to +85
–55 to +125
Note
–3.0 V (MIN.) (Pulse width : 30 ns)
Caution Exposing the device to stress above those listed in Absolute Maximum Rating could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Condition
µ
PD448012-BxxX
MIN.
MAX.
3.6
V
CC
+ 0.4
–
Note
µ
PD448012-CxxX
MIN.
2.2
2.4
2.0
–0.3
Note
Unit
MAX.
3.6
V
CC
+ 0.4
V
CC
+ 0.3
+0.3
+85
V
°C
V
V
Supply voltage
High level input voltage
V
CC
V
IH
2.7 V
≤
V
CC
≤
3.6 V
2.2 V
≤
V
CC
< 2.7 V
2.7
2.4
–
–0.3
Low level input voltage
Operating ambient temperature
V
IL
T
A
+0.5
+85
–25
–25
Note
–1.5 V (MIN.) (Pulse width: 30 ns)
Capacitance (T
A
= 25°C, f = 1 MHz)
°
Parameter
Input capacitance
Input / Output capacitance
Symbol
C
IN
C
I/O
Test condition
V
IN
= 0 V
V
I/O
= 0 V
MIN.
TYP.
MAX.
8
10
Unit
pF
pF
Remarks 1.
V
IN
: Input voltage, V
I/O
: Input / Output voltage
2.
These parameters are not 100% tested.
Data Sheet M14466EJ5V0DS
5
京公网安备 11010802033920号
EEWORLD
