2SC2411-R datasheet, PDF - EEWORLD Datasheet

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2SC2411-R: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size121KB，3 Pages; ManufacturerMicro Commercial Components (MCC)

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2SC2411-R Overview

Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

2SC2411-R Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	32 V
Configuration	SINGLE
Minimum DC current gain (hFE)	180
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Base Number Matches	1

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MCC

TM

Micro Commercial Components

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

2SC2411-P

2SC2411-Q

2SC2411-R

Features

High

I

C.

ICMax.=

0.5

A

Low V

CE(sat)

.

Optimal for low voltage operation.

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

and MSL Rating 1

NPN Silicon

Epitaxial Transistors

SOT-23

Maximum Ratings @ T

a

= 25

(unless otherwise noted)

A

D

Symbol

I

C

P

D

T

J

T

STG

Parameter

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

Value

0.5

0.2

150

-55 to +150

Unit

A

W

C

B

C

B

F

E

Electrical Characteristics @ 25

O

C Unless Otherwise Specified

Symbol

OFF CHARACTERISTICS

V(

BR

)CEO

V(

BR

)CBO

V(

BR

)EBO

Parameter

Collector-Emitter Breakdown Voltage

(I

C

=1mAdc,I

B

=0)

Collector-Base Breakdown Voltage

(I

C

=100uAdc,I

E

=0)

Collector-Base Breakdown Voltage

(I

E

=100uAdc,I

C

=0)

Collector-Base Cutoff Current

(V

CB

=20Vdc, I

E

=0)

Emitter-Base Cutoff Current

(V

EB

=4.0Vdc, I

C

=0)

DC Current Gain

(I

C

=100mAdc, V

CE

=3.0Vdc)

Collector-Emitter Saturation Voltage

(I

C

=500mAdc, I

B

=50mAdc)

Transition Frequency

(V

CE

=5Vdc,I

C

=20mAdc,f=100MHZ)

(V

CB

=10Vdc,I

E

=0,f=1MHZ)

Min

32

40

5.0

TYPE

Max

Units

G

H

J

V

1

µAdc

uAdc

DIM

A

B

C

D

E

F

G

H

J

K

DIMENSIONS

INCHES

MIN

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

MM

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

.085

.37

I

CBO

I

EBO

ON CHARACTERISTICS

H

FE

V

CE(sat)

)

7

C

ob

82

390

0.4

250

6.0

Vdc

MHZ

pF

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

Suggested Solder

Pad Layout

.031

.800

.035

.900

CLASSIFICATION OF

h

FE

Rank

Range

Marking

.079

2.000

inches

mm

P

82-180

CP

Q

120-270

CQ

R

180-390

CR

.037

.950

.037

.950

Revision: 3

www.mccsemi.com

1 of

3

2008/01/01

2SC2411-R Related Products

	2SC2411-R	2SC2411-Q	2SC2411-P
Description	Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3
Reach Compliance Code	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A
Collector-emitter maximum voltage	32 V	32 V	32 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	180	120	82
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e0	e0	e3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal surface	TIN LEAD	TIN LEAD	Matte Tin (Sn)
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	250 MHz
Base Number Matches	1	1	-

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