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UPD29F032204ALF9-A85BX-BS2

Description
IC,EEPROM,NOR FLASH,2MX16/4MX8,CMOS,BGA,63PIN,PLASTIC
Categorystorage    storage   
File Size224KB,32 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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UPD29F032204ALF9-A85BX-BS2 Overview

IC,EEPROM,NOR FLASH,2MX16/4MX8,CMOS,BGA,63PIN,PLASTIC

UPD29F032204ALF9-A85BX-BS2 Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
Reach Compliance Codecompliant
Maximum access time85 ns
Spare memory width8
startup blockBOTTOM
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PBGA-B63
memory density33554432 bit
Memory IC TypeFLASH
memory width16
Number of departments/size8,63
Number of terminals63
word count2097152 words
character code2000000
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize2MX16
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA63,8X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
Parallel/SerialPARALLEL
power supply3.3 V
Certification statusNot Qualified
ready/busyYES
Department size8K,64K
Maximum standby current0.000005 A
Maximum slew rate0.045 mA
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
switch bitYES
typeNOR TYPE
DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD29F032204AL-X
32M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY
4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE)
Description
The
µ
PD29F032204AL-X is a flash memory organized of 33,554,432 bits and 71 sectors. Sectors of this memory
can be erased at a low voltage (2.7 to 3.3 V, 3.0 to 3.6 V) supplied from a single power source, or the contents of the
entire chip can be erased. Two modes of memory organization, BYTE mode (4,194,304 words
×
8 bits) and WORD
mode (2,097,152 words
×
16 bits), are selectable so that the memory can be programmed in byte or word units.
The
µ
PD29F032204AL-X can be read while its contents are being erased or programmed. The memory cell is
divided into two banks. While sectors in one bank are being erased or programmed, data can be read from the other
bank thanks to the simultaneous execution architecture. The banks are 16M bits and 16M bits.
This flash memory comes in two types. The T type has a boot sector located at the highest address (sector) and the
B type has a boot sector at the lowest address (sector).
Because the
µ
PD29F032204AL-X enables the boot sector to be erased, it is ideal for storing a boot program. In
addition, program code that controls the flash memory can be also stored, and the program code can be
programmed or erased without the need to load it into RAM. Eight small sectors for storing parameters are provided,
each of which can be erased in 8K bytes units.
Once a program or erase command sequence has been executed, an automatic program or automatic erase
function internally executes program or erase and verification automatically.
Because the
µ
PD29F032204AL-X can be electrically erased or programmed by writing an instruction, data can be
reprogrammed on-board after the flash memory has been installed in a system, making it suitable for a wide range of
applications.
This flash memory is packed in a 48-pin PLASTIC TSOP (I) and 63-pin TAPE FBGA.
Features
Two bank organization enabling simultaneous execution of program / erase and read
Bank organization: 2 banks (16M bits + 16M bits)
Memory organization : 4,194,304 words
×
8 bits (BYTE mode)
2,097,152 words
×
16 bits (WORD mode)
Sector organization : 71 sectors (8K bytes / 4K words
×
8 sectors, 64K bytes / 32K words
×
63 sectors)
2 types of sector organization
T type : Boot sector allocated to the highest address (sector)
B type : Boot sector allocated to the lowest address (sector)
3-state output
Automatic program
Program suspend / resume
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14912EJ7V0DS00 (7th edition)
Date Published September 2002 NS CP (K)
Printed in Japan
The mark
#
shows major revised points.
©
2001

UPD29F032204ALF9-A85BX-BS2 Related Products

UPD29F032204ALF9-A85BX-BS2 UPD29F032204ALGZ-B85BX-MJH UPD29F032204ALGZ-A85BX-MJH
Description IC,EEPROM,NOR FLASH,2MX16/4MX8,CMOS,BGA,63PIN,PLASTIC IC,EEPROM,NOR FLASH,2MX16/4MX8,CMOS,TSSOP,48PIN,PLASTIC IC,EEPROM,NOR FLASH,2MX16/4MX8,CMOS,TSSOP,48PIN,PLASTIC
Maker Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation
Reach Compliance Code compliant compliant compli
Maximum access time 85 ns 85 ns 85 ns
Spare memory width 8 8 8
startup block BOTTOM BOTTOM BOTTOM
command user interface YES YES YES
Universal Flash Interface YES YES YES
Data polling YES YES YES
JESD-30 code R-PBGA-B63 R-PDSO-G48 R-PDSO-G48
memory density 33554432 bit 33554432 bit 33554432 bi
Memory IC Type FLASH FLASH FLASH
memory width 16 16 16
Number of departments/size 8,63 8,63 8,63
Number of terminals 63 48 48
word count 2097152 words 2097152 words 2097152 words
character code 2000000 2000000 2000000
Maximum operating temperature 85 °C 85 °C 85 °C
Minimum operating temperature -25 °C -25 °C -25 °C
organize 2MX16 2MX16 2MX16
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code FBGA TSSOP TSSOP
Encapsulate equivalent code BGA63,8X12,32 TSSOP48,.8,20 TSSOP48,.8,20
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, FINE PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial PARALLEL PARALLEL PARALLEL
power supply 3.3 V 3 V 3.3 V
Certification status Not Qualified Not Qualified Not Qualified
ready/busy YES YES YES
Department size 8K,64K 8K,64K 8K,64K
Maximum standby current 0.000005 A 0.000005 A 0.000005 A
Maximum slew rate 0.045 mA 0.045 mA 0.045 mA
Nominal supply voltage (Vsup) 3.3 V 3 V 3.3 V
surface mount YES YES YES
technology CMOS CMOS CMOS
Temperature level OTHER OTHER OTHER
Terminal form BALL GULL WING GULL WING
Terminal pitch 0.8 mm 0.5 mm 0.5 mm
Terminal location BOTTOM DUAL DUAL
switch bit YES YES YES
type NOR TYPE NOR TYPE NOR TYPE
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