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SB5100_NL

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, DO-201AD, LEAD FREE, P3, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size41KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

SB5100_NL Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, DO-201AD, LEAD FREE, P3, 2 PIN

SB5100_NL Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeDO-201AD
package instructionO-PALF-W2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum power dissipation5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
surface mountNO
technologySCHOTTKY
Terminal surfaceTIN
Terminal formWIRE
Terminal locationAXIAL
SB520-SB5100
SB520 - SB5100
Features
Metal to silicon rectifier, majority
carrier conduction.
For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.
Low power loss, high efficiency.
High current capability, low V
F.
High surge capacity.
Glass passivated
DO-201AD
COLOR BAND DENOTES CATHODE
Schottky Rectifiers
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
520
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
.375 " lead length @ T
A
= 75°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
20
530
30
540
40
Value
550
50
5.0
150
-50 to +150
-50 to +150
560
60
580
80
5100
100
Units
V
A
A
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
5.0
25
Units
W
°C/W
Electrical Characteristics
Symbol
V
F
I
R
C
T
T
A
= 25°C unless otherwise noted
Parameter
520
Forward Voltage @ 5.0 A
Reverse Current @ rated V
R
Total Capacitance
V
R
= 4.0 V, f = 1.0 MHz
T
A
= 25°C
T
A
= 100°C
50
500
530
0.55
Device
540
550
0.5
25
380
560
580
5100
0.67
0.85
Units
V
mA
mA
pF
2001
Fairchild Semiconductor Corporation
SB520 - SB5100, Rev. C

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