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IRFK2D150

Description
Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size62KB,1 Pages
ManufacturerThomson Consumer Electronics
Download Datasheet Parametric View All

IRFK2D150 Overview

Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET

IRFK2D150 Parametric

Parameter NameAttribute value
MakerThomson Consumer Electronics
package instruction,
Reach Compliance Codeunknown
Maximum drain current (Abs) (ID)72 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Number of components1
Maximum operating temperature150 °C
Maximum power dissipation(Abs)500 W
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