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BR34E02FVT-3TR

Description
Serial EEPROM Series Standard EEPROM Plug & Play EEPROM
File Size845KB,33 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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BR34E02FVT-3TR Overview

Serial EEPROM Series Standard EEPROM Plug & Play EEPROM

Datasheet
Serial EEPROM Series Standard EEPROM
Plug & Play EEPROM
BR34E02-3
General Description
BR34E02-3 is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect)
Features
256×8 bit Architecture Serial EEPROM
Wide Operating Voltage Range: 1.7V to 5.5V
Two-Wire Serial Interface
Self-Timed Erase and Write Cycle
Page Write Function (16byte)
Write Protect Mode
Settable Reversible Write Protect Function : 00h-7Fh
Write Protect 1 (Onetime Rom)
: 00h-7Fh
Write Protect 2 (Hardwire WP PIN)
: 00h-FFh
Low Power consumption
Write
(at 1.7V) :
0.4mA (typ)
Read
(at 1.7V) :
0.1mA (typ)
Standby
(at 1.7V) :
0.1µA (typ)
Prevention of Write Mistake
Write Protect Feature (WP pin)
Prevention of Write Mistake at Low Voltage
High Reliability Fine Pattern CMOS Technology
More than 1 million write cycles
More than 40 years data retention
Noise Reduction Filtered Inputs in SCL / SDA
Initial delivery state FFh
Packages
W(Typ) x D(Typ) x H(Max)
TSSOP-B8
3.00mm x 6.40mm x 1.20mm
VSON008X2030
2.00mm x 3.00mm x 0.60mm
BR34E02-3
Capacity
2Kbit
Bit Format
256x8
Type
BR34E02FVT-3
BR34E02NUX-3
Power Source
Voltage
1.7V to 5.5V
Package
TSSOP-B8
VSON008X2030
Absolute Maximum Ratings
(Ta=25℃)
Parameter
Supply Voltage
Power Dissipation
Storage Temperature
Operating Temperature
Input Voltage / Output
Voltage (A0)
Input Voltage / Output
Voltage (others)
Electrostatic discharge
voltage
(human body model)
Symbol
V
CC
Pd
Tstg
Topr
-
-
V
ESD
Rating
-0.3 to +6.5
330 (TSSOP-B8)
300 (VSON008X2030)
-65 to +125
-40 to +85
-0.3 to 10.0
-0.3 to V
CC
+1.0
-4000 to +4000
Unit
V
mW
V
V
V
Derate by 3.3mW/°C when operating above Ta=25°C
Derate by 3.0mW/°C when operating above Ta=25°C
Remark
Memory Cell Characteristics
(Ta=25℃, V
CC
=1.7V to 5.5V)
Parameter
Write / Erase Cycle
(1)
Data Retention
(1)
(1) Not 100% TESTED
Limit
Min
1,000,000
40
Typ
-
-
Max
-
-
Unit
Times
Years
○Product
structure:Silicon monolithic integrated circuit
www.rohm.com
©2013 ROHM Co., Ltd. All rights reserved.
TSZ22111½14½001
○This
product has no designed protection against radioactive rays
1/30
TSZ02201-0R2R0G100520-1-2
31.May.2013 Rev.003

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