b. Guaranteed by design, not subject to production testing.
c. Package Limited
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
V
GS
= 10 thru 3
V
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
3
4
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DTE2312
12
2
T
C
= 125 °C
1
8
V
GS
= 2
V
4
T
C
= 25 °C
0
0
1
2
3
4
5
0
0.0
T
C
= - 55 °C
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.04
1500
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
1200
0.03
V
GS
= 2.5
V
C - Capacitance (pF)
C
iss
900
V
GS
= 4.5
V
0.02
V
GS
= 10
V
600
300
C
oss
C
rss
0
4
8
12
16
20
0.01
0
4
8
12
16
20
0
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 9.9 A
V
GS
- Gate-to-Source
Voltage
(V)
8
R
DS(on)
- On-Resistance
(Normalized)
1.5
V
DS
= 10
V
1.8
Capacitance
V
GS
= 4.5
V,
I
D
= 9.4 A
6
V
DS
= 16
V
1.2
V
GS
= 10
V,
I
D
= 9.9 A
0.9
4
2
0
0
4
8
12
16
20
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
3
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.040
www.din-tek.jp
DTE2312
I
D
= 9.9 A
R
DS(on)
- On-Resistance (Ω)
0.034
I
S
- Source Current (A)
10
0.028
T
J
= 125 °C
T
J
= 150 °C
1
T
J
= 25 °C
0.022
0.016
T
J
= 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.010
0
5
10
15
20
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Soure-Drain Diode Forward Voltage
1.4
30
On-Resistance vs. Gate-to-Source Voltage
25
1.2
I
D
= 250
µA
V
GS(th)
(V)
Power (W)
20
1.0
15
10
0.8
5
0.6
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
100
µs
1 ms
1
10 ms
100 ms
1s
10 s
DC
T
A
= 25 °C
Single Pulse
BVDSS
Limited
1
10
100
0.1
0.01
0.1
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
4
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
28
www.din-tek.jp
DTE2312
I
D
- Drain Current (A)
21
14
7
Package Limited
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
25
2.0
20
1.5
Power (W)
15
Power (W)
0
25
50
75
100
125
150
1.0
10
0.5
5
0
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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