c. Maximum under Steady State conditions is 81 °C/W.
d. Package limited.
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJC
Typical
26
1.9
Maximum
33
2.4
Unit
°C/W
1
www.din-tek.jp
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 2 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 2 A, V
GS
= 0 V
- 0.75
28
20
13
15
T
C
= 25 °C
- 16
- 50
- 1.2
45
40
A
V
ns
nC
ns
b
DTL15P03
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 25 V
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
- 10 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 10 A
V
GS
= - 4.5 V, I
D
= - 7 A
V
DS
= - 10 V, I
D
= - 10 A
Min.
- 30
Typ.
Max.
Unit
V
- 31
5.5
- 1.0
- 3.0
± 100
-1
-5
- 30
0.035
0.055
23
1960
0.043
0.070
mV/°C
V
nA
µA
A
Ω
S
V
DS
= - 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 10 A
V
DS
= - 15 V, V
GS
= - 4.5 V, I
D
= - 10 A
f = 1 MHz
V
DD
= - 15 V, R
L
= 3
Ω
I
D
≅
- 5 A, V
GEN
= - 10 V, R
g
= 1
Ω
0.3
380
325
43
22
6
11
1.3
11
13
32
9
44
2.5
22
25
50
18
70
160
50
30
65
33
pF
nC
Ω
ns
V
DD
= - 15 V, R
L
= 3
Ω
I
D
≅
- 5 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
100
28
15
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
60
V
GS
= 10 thru 5
V
4
I
D
- Drain Current (A)
5
www.din-tek.jp
DTL15P03
50
I
D
- Drain Current (A)
40
V
GS
= 4
V
30
3
2
V
GS
= 125 °C
1
20
10
V
GS
= 3
V
0
0
1
2
3
4
5
V
GS
= 25 °C
0
0
1
2
3
V
GS
= - 55 °C
4
5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.05
3000
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.04
C - Capacitance (pF)
2400
C
iss
1800
0.03
V
GS
= 4.5
V
0.02
V
GS
= 10
V
0.01
1200
C
oss
600
C
rss
0
0
10
20
30
40
50
60
0
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
10
I
D
= 10 A
V
GS
- Gate-to-Source
Voltage
(V)
8
R
DS(on)
- On-Resistance
V
DS
= 10
V
6
V
DS
= 20
V
4
V
DS
= 15
V
1.4
1.6
I
D
= 10 A
Capacitance
V
GS
= - 10
V
(Normalized)
1.2
V
GS
= - 4.5
V
1.0
2
0.8
0
0
10
20
30
40
50
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
3
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.10
I
D
= 10 A
R
DS(on)
- On-Resistance (Ω)
10
I
S
- Source Current (A)
T
J
= 150 °C
T
J
= 25 °C
0.08
www.din-tek.jp
DTL15P03
1
0.06
0.1
0.04
T
J
= 125 °C
0.02
T
J
= 25 °C
0.01
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.8
50
On-Resistance vs. Gate-to-Source Voltage
0.6
I
D
= 5 mA
V
GS(th)
Variance
(V)
0.4
Power (W)
40
30
0.2
I
D
= 250
µA
20
0.0
10
- 0.2
- 0.4
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
I
D
- Drain Current (A)
10
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
100 ms
1s
10 s
T
A
= 25 °C
Single Pulse
0.01
0.01
0.1
1
10
DC
0.1
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area
4
MOSFET TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
45
www.din-tek.jp
DTL15P03
36
I
D
- Drain Current (A)
27
18
Package Limited
9
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
65
2.0
52
1.6
Power (W)
26
Power (W)
0
39
1.2
0.8
13
0.4
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Power, Junction-to-Case
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
[i=s]This post was last edited by dontium on 2015-1-23 13:23[/i]
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