c. Maximum under steady state conditions is 80 °C/W.
d. Based on T
C
= 25 °C.
t
10
s
Steady State
Symbol
R
thJA
R
thJF
Typical
29
13
Maximum
35
16
Unit
°C/W
1
www.din-tek.jp
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 75 °C
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 75 °C
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 5 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 3 A, V
GS
= 0 V
- 0.71
67
74
22
45
T
C
= 25 °C
- 29
- 70
- 1.2
130
150
A
V
ns
nC
ns
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 15 V, R
L
= 1.5
I
D
- 10 A, V
GEN
= - 4.5 V, R
g
= 1
V
DD
= - 15 V, R
L
= 1.5
I
D
- 10 A, V
GEN
= - 10 V, R
g
= 1
f = 1 MHz
0.6
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 20 A
V
DS
= - 15 V, V
GS
= - 4.5 V, I
D
= - 20 A
V
DS
= - 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
- 10 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 15 A
V
GS
= - 4.5 V, I
D
= - 10 A
V
DS
= - 10 V, I
D
= - 15 A
- 30
0.0039
0.0062
24
6000
860
790
129
61
16.5
23.5
3
16
16
80
20
75
130
60
40
6
30
30
150
40
150
260
120
80
ns
195
95
nC
pF
0.005
0.00775
-1
- 30
- 31
5.3
- 2.5
± 100
- 100
- 75
- 10
-3
µA
A
S
nA
V
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
DTM4459
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
70
V
GS
= 10 thru 4
V
56
I
D
- Drain Current (A)
www.din-tek.jp
DTM4459
4.0
3.2
I
D
- Drain Current (A)
42
2.4
T
C
= 125 °C
1.6
T
C
= 25 °C
0.8
T
C
= - 55 °C
28
V
GS
= 3
V
14
0
0
1
2
3
4
V
DS
- Drain-to-Source
Voltage
(V)
5
0.0
0.0
0.8
1.6
2.4
3.2
4.0
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.008
9000
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.007
C - Capacitance (pF)
V
GS
= 4.5
V
0.006
7200
C
iss
5400
0.005
V
GS
= 10
V
0.004
3600
1800
C
rss
C
oss
0.003
0
14
28
42
I
D
- Drain Current (A)
56
70
0
0
18
24
6
12
V
DS
- Drain-to-Source
Voltage
(V)
30
On-Resistance vs. Drain Current
10
1.6
Capacitance
R
DS(on)
- On-Resistance (Normalized)
I
D
= 20 A
V
GS
- Gate-to-Source
Voltage
(V)
8
V
DS
= 10
V
V
DS
= 15
V
I
D
= 15 A
1.4
V
GS
= 10
V
1.2
V
GS
= 4.5
V
1.0
6
V
DS
= 20
V
4
2
0.8
0
0
30
60
90
120
150
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
3
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.030
I
D
= 15 A
R
DS(on)
- On-Resistance (Ω)
www.din-tek.jp
DTM4459
10
I
S
- Source Current (A)
T
J
= 150 °C
1
T
J
= 25 °C
0.024
0.018
0.1
0.012
T
J
= 125 °C
0.006
T
J
= 25 °C
0.01
0.001
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.8
200
On-Resistance vs. Gate-to-Source Voltage
0.6
V
GS(th)
Variance
(V)
I
D
= 250
µA
160
0.4
Power (W)
150
120
I
D
= 5 mA
0.2
80
0.0
40
- 0.2
- 0.4
- 50
- 25
0
25
50
75
100
125
0
0 .0 0 1
0.01
T
J
- Temperature (°C)
0.1
Time (s)
1
10
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
100 ms
1s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.01
BVDSS
10 s
DC
100
1
10
0.1
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area
4
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
35
www.din-tek.jp
DTM4459
28
I
D
- Drain Current (A)
21
14
7
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
10
2.0
8
1.6
Power (W)
Power (W)
6
1.2
4
0.8
2
0.4
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Power, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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