Dual P-Channel 20-V (D-S) MOSFET
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DTM4913
PRODUCT SUMMARY
V
DS
(V)
- 20
R
DS(on)
(Ω)
0.015 at V
GS
= - 4.5 V
0.019 at V
GS
= - 2.5 V
0.024 at V
GS
= - 1.8 V
I
D
(A)
- 9.4
- 8.4
- 7.5
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switching
S
1
S
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
D
1
P-Channel MOSFET
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
- 1.7
2.0
1.3
- 55 to 150
- 9.4
- 7.5
- 30
- 0.9
1.1
0.7
W
°C
10 s
- 20
±8
- 7.1
- 5.7
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
45
85
26
Maximum
62.5
110
35
°C/W
Unit
1
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SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= - 1.7 A, dI/dt = 100 A/µs
V
DD
= 10 V, R
L
= 10
Ω
I
D
≅
- 1 A, V
GEN
= - 4.5 V, R
g
= 6
Ω
V
DS
= 10 V, V
GS
= - 4.5 V, I
D
= - 9.4 A
43
7.1
10.9
32
42
350
160
127
50
65
525
240
200
ns
65
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= - 500 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= - 5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 9.4 A
V
GS
= - 2.5 V, I
D
= - 8.4 A
V
GS
= - 1.8 V, I
D
= - 3.0 A
V
DS
= - 10 V, I
D
= - 9.4 A
I
S
= - 1.7 A, V
GS
= 0 V
- 30
0.0125
0.0155
0.020
40
- 0.7
- 1.2
0.015
0.019
0.024
S
V
Ω
- 0.40
- 1.0
± 100
-1
-5
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
DTM4913
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
V
GS
= 5 V thru 2 V
24
I
D
- Drain Current (A)
I
D
- Drain Current (A)
24
30
18
1.5 V
12
18
12
T
C
= 125
°C
6
25
°C
0
0.0
6
1V
0
0
1
2
3
4
5
- 55
°C
0.4
0.8
1.2
1.6
2.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.040
0.035
R
DS(on)
- On-Resistance (Ω)
0.030
0.025
0.020
0.015
0.010
0.005
0.000
0
6
12
18
24
30
0
0
4
8
V
GS
= 4.5 V
1000
C
rss
C
oss
V
GS
= 1.8 V
V
GS
= 2.5 V
C - Capacitance (pF)
6000
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DTM4913
5000
C
iss
4000
3000
2000
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
5
V
DS
= 10 V
I
D
= 9.4 A
4
R
DS(on)
- On-Resistance
(Normalized)
1.4
Capacitance
1.6
V
GS
= 4.5 V
I
D
= 9.4 A
V
GS
- Gate-to-Source Voltage (V)
3
1.2
2
1.0
1
0.8
0
0
10
20
30
40
50
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
40
0.040
0.035
R
DS (on)
- On-Resistance (Ω)
I
S
- Source Current (A)
T
J
= 150
°C
10
0.030
0.025
On-Resistance vs. Junction Temperature
I
D
= 3 A
I
D
= 9.4 A
0.020
0.015
0.010
0.005
T
J
= 25
°C
1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
3
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.4
50
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DTM4913
0.3
V
GS(th)
Variance (V)
I
D
= 500
µA
0.2
Power (W)
40
30
0.1
20
0.0
10
- 0.1
- 0.2
- 50
- 25
0
25
50
75
100
125
150
0
10
-2
10
-1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
Single Pulse Power
I
DM
Limited
10
I
D
- Drain Current (A)
P(t) = 0.001
P(t) = 0.01
1
I
D(on)
Limited
P(t) = 0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
DS
> minimum V
GS
at which R
DS(on)
is specified
P(t) = 1
P(t) = 10
DC
0.1
Safe Operating Area, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 85
°C/W
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (s)
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
4
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
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DTM4913
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
5
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