Dual P-Channel 30-V (D-S) MOSFET
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DTM4953A
PRODUCT SUMMARY
V
DS
(V)
- 30
R
DS(on)
(Ω)
0.053 at V
GS
= - 10 V
0.090 at V
GS
= - 4.5 V
I
D
(A)
- 4.9
- 3.7
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
S
1
S
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
D
1
P-Channel MOSFET
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
- 1.7
2.0
1.3
- 55 to 150
- 4.9
- 3.9
- 30
- 0.9
1.1
0.7
W
°C
10 s
- 30
± 20
- 3.7
- 2.9
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
52
90
32
Maximum
62.5
110
40
°C/W
Unit
1
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SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= - 1.7 A, dI/dt = 100 A/µs
V
DD
= - 15 V, R
L
= 15
Ω
I
D
≅
- 1 A, V
GEN
= - 10 V, R
g
= 6
Ω
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 4.9 A
15
4
2
7
10
40
20
30
15
20
80
40
60
ns
25
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
=
- 5 V, V
GS
= - 10 V
V
GS
=
- 10 V, I
D
= - 4.9 A
V
GS
= - 4.5 V, I
D
= - 3.7 A
V
DS
= - 10 V, I
D
= - 4.9 A
I
S
= - 1.7 A, V
GS
= 0 V
- 30
0.045
0.075
9
- 0.8
- 1.2
0.053
0.090
-1
± 100
-1
- 25
V
nA
µA
A
Ω
S
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
DTM4953A
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
V
GS
= 10 V thru 7 V
24
I
D
- Drain Current (A)
I
D
- Drain Current (A)
5V
18
30
6V
24
T
C
= - 55 °C
25 °C
18
125 °C
12
4V
6
3V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
12
6
0
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage
V
GS
- Gate-to-Source Voltage
Output Characteristics
Transfer Characteristics
2
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.20
1500
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DTM4953A
R
DS(on)
- On-Resistance (Ω)
1200
0.15
C - Capacitance (pF)
900
C
iss
0.10
V
GS
= 4.5 V
600
C
oss
V
GS
= 10 V
0.05
300
C
rss
0
0
6
12
18
24
30
0
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
V
DS
= 15 V
I
D
= 4.9 A
8
R
DS(on)
- On-Resistance
1.4
1.6
V
GS
= 10 V
I
D
= 4.9 A
Capacitance
V
GS
- Gate-to-Source Voltage (V)
6
(Normalized)
1.2
4
1.0
2
0.8
0
0
4
8
12
16
20
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
30
0.40
On-Resistance vs. Junction Temperature
I
D
= 4.9 A
0.35
T
J
= 150 °C
I
S
- Source Current (A)
10
R
DS(on)
- On-Resistance (Ω)
0.30
0.25
0.20
0.15
0.10
0.05
T
J
= 25 °C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
- Source-to-Drain Voltage (V)
0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
3
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.8
50
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DTM4953A
0.6
V
GS(th)
Variance (V)
I
D
= 250
µA
0.4
Power (W)
30
40
0.2
20
0.0
10
- 0.2
- 0.4
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
125
150
0
10
-3
10
-2
10
-1
1
Time (s)
10
100
600
Threshold Voltage
2
1
Duty Cycle = 0.5
Single Pulse Power
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (s)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
4
Package Information
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SOIC
(NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
7
6
5
E
1
2
3
4
H
S
D
0.25 mm (Gage Plane)
A
h x 45
C
All Leads
q
L
0.101 mm
0.004"
e
B
A
1
MILLIMETERS
DIM
A
A
1
B
C
D
E
e
H
h
L
q
S
5.80
0.25
0.50
0°
0.44
Min
1.35
0.10
0.35
0.19
4.80
3.80
1.27 BSC
6.20
0.50
0.93
8°
0.64
0.228
0.010
0.020
0°
0.018
Max
1.75
0.20
0.51
0.25
5.00
4.00
Min
0.053
0.004
0.014
0.0075
0.189
0.150
INCHES
Max
0.069
0.008
0.020
0.010
0.196
0.157
0.050 BSC
0.244
0.020
0.037
8°
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
1
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