Dual P-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
() at V
GS
= - 10 V
R
DS(on)
() at V
GS
= - 4.5 V
I
D
(A) per leg
Configuration
- 30
0.046
0.078
-5.4
Dual
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DTM4953
FEATURES
• TrenchFET
®
Power MOSFET
• AEC-Q101 Qualified
c
• 100 % R
g
and UIS Tested
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
8
7
6
5
D
1
D
1
D
2
D
2
S
1
S
2
G
1
G
2
D
1
D
2
P-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
SYMBOL
V
DS
V
GS
I
D
I
S
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
- 30
± 20
- 5.4
- 3.8
-3
- 26
- 17
14
3.3
1.1
- 55 to + 175
mJ
W
°C
A
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PCB Mount
b
SYMBOL
R
thJA
R
thJF
LIMIT
110
45
UNIT
°C/W
1
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SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= - 250 μA
V
DS
= V
GS
, I
D
= - 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= - 10 V
V
GS
= - 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V
V
GS
= - 10 V
V
GS
= - 4.5 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
I
F
= - 2 A, V
GS
= 0 V
V
DD
= - 15 V, R
L
= 6.8
I
D
- 1 A, V
GEN
= - 10 V, R
g
= 1
f = 1 MHz
V
GS
= - 10 V
V
DS
= - 15 V, I
D
= - 4.9 A
V
GS
= 0 V
V
DS
= - 25 V, f = 1 MHz
-
-
-
-
-
-
2.60
-
-
-
-
-
-
557
126
90
15
2.1
3.5
5.26
3
9
20
9
-
- 0.8
-
8.50
5
14
30
14
- 26
- 1.2
A
V
ns
670
190
115
22
nC
pF
g
fs
V
DS
= - 30 V
V
DS
= - 30 V, T
J
= 125 °C
V
DS
= - 30 V, T
J
= 175 °C
V
DS
-
5 V
I
D
= - 4.9 A
I
D
= - 4.9 A, T
J
= 125 °C
I
D
= - 4.9 A, T
J
= 175 °C
I
D
= - 3.7 A
- 30
- 1.5
-
-
-
-
- 20
-
-
-
-
-
-
- 2.0
-
-
-
-
-
0.035
-
-
0.065
9
-
- 2.5
± 100
-1
- 50
- 150
-
0.045
0.066
0.076
0.078
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
DTM4953
V
DS
= - 15 V, I
D
= - 4.9 A
Source-Drain Diode Ratings and Characteristics
b
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
30
V
GS
= 10 V thru 6 V
24
I
D
- Drain Current (A)
V
GS
= 5 V
I
D
- Drain Current (A)
24
30
T
C
= 25
°C
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DTM4953
18
18
12
V
GS
= 4 V
12
6
V
GS
= 3 V
0
0
2
4
6
8
V
DS
- Drain-to-Source Voltage (V)
10
6
T
C
= 125
°C
T
C
= - 55
°C
0
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Output Characteristics
Transfer Characteristics
10
0.15
8
R
DS(on)
- On-Resistance (Ω)
0.12
V
GS
= 4.5 V
0.09
I
D
- Drain Current (A)
6
4
T
C
= 25
°C
0.06
2
T
C
= 125
°C
0
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
5
T
C
= - 55
°C
0.03
V
GS
= 10 V
0.00
0
6
12
18
I
D
- Drain Current (A)
24
30
Transfer Characteristics
On-Resistance vs. Drain Current
1000
10
C
iss
600
V
GS
-
Gate-to-Source
Voltage (V)
800
8
I
D
= 4.9 A
V
DS
= 15 V
C - Capacitance (pF)
6
400
C
oss
200
C
rss
0
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
30
4
2
0
0
3
6
9
12
Q
g
- Total
Gate
Charge (nC)
15
Capacitance
Gate Charge
3
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.0
100
I
D
= 4.9 A
1.7
I
S
-
Source
Current (A)
V
GS
= 10 V
1.4
V
GS
= 4.5 V
1.1
10
T
J
= 150
°C
1
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DTM4953
R
DS(on)
- On-Resistance (Normalized)
0.1
T
J
= 25
°C
0.8
0.01
0.5
- 50 - 25
0.001
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
On-Resistance vs. Junction Temperature
0.25
1.0
Source Drain Diode Forward Voltage
0.20
0.7
I
D
= 250 μA
R
DS(on)
- On-Resistance (Ω)
V
GS(th)
Variance (V)
0.15
0.4
I
D
= 5 mA
0.1
0.10
T
J
= 150
°C
0.05
T
J
= 25
°C
0.00
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
- 0.2
- 0.5
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
- 30
I
D
= 1 mA
Threshold Voltage
V
DS
- Drain-to-Source Voltage (V)
- 32
- 34
- 36
- 38
- 40
- 50 - 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
4
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
100
I
DM
Limited
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DTM4953
10
I
D
- Drain Current (A)
100 μs
1 ms
1
Limited by R
DS(on)
*
10 ms
100 ms
1
s
10
s,
DC
0.1
T
C
= 25
°C
Single
Pulse
BVDSS Limited
0.01
0.01
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
100
Safe Operating Area
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-
4
10-
3
10-
2
10-
1
1
10
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 110 °C/W
3. T
JM
-
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
5
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