DTL1N60/DTP1N60/DTU1N60
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
14
2.7
8.1
Single
600
7
www.din-tek.jp
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
TO-220AB
D
DPAK
(TO-252)
D
D
IPAK
(TO-251)
G
G
S
G
D S
G D S
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
LIMIT
600
± 20
1.4
0.89
0.28
0.020
93
1.4
3.6
36
2.5
3.8
- 55 to + 150
260
d
UNIT
V
A
Pulsed Drain
I
DM
5.6
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
E
AS
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
I
AR
a
Repetitive Avalanche Energy
E
AR
T
C
= 25 °C
Maximum Power Dissipation
P
D
e
Maximum Power Dissipation (PCB Mount)
T
A
= 25 °C
Peak Diode Recovery dV/dt
c
dV/dt
Operating Junction and Storage Temperature Range
T
J
, T
stg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 37 mH, R
g
= 25
Ω,
I
AS
= 1.4 A (see fig. 12).
c. I
SD
≤1.4
A, dI/dt
≤
40 A/μs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
W/°C
mJ
A
mJ
W
V/ns
°C
1
DTL1N60/DTP1N60/DTU1N60
www.din-tek.jp
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJA
R
thJC
MIN.
-
-
-
TYP.
-
-
-
MAX.
110
50
3.5
°C/W
UNIT
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 20 V
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 1.2 A
b
V
DS
= 50 V, I
D
= 1.2 A
600
-
2.0
-
-
-
-
1.4
-
0.88
-
-
-
-
-
-
-
-
4.0
± 100
100
500
7.0
-
V
V/°C
V
nA
μA
Ω
S
V
GS
= 0 V,
V
DS
= - 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
-
229
42
2.6
-
-
-
10
13
30
25
4.5
7.5
-
-
-
14
2.7
8.1
-
-
-
-
-
nH
-
ns
nC
pF
V
GS
= 10 V
I
D
= 1.4 A, V
DS
= 360 V,
see fig. 6 and 13
b
-
-
-
V
DD
= 300 V, I
D
= 1.4 A,
R
g
= 18
Ω,
R
D
= 135
Ω,
see fig. 10
b
-
-
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
G
-
S
-
-
-
-
-
-
-
-
290
0.67
2.0
A
8.0
1.6
580
1.3
V
ns
μC
G
S
T
J
= 25 °C, I
S
= 1.4 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 1.4 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 μs; duty cycle
≤
2 %.
2
DTL1N60/DTP1N60/DTU1N60
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
www.din-tek.jp
10
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
1
T
J
= 150
°
C
1
T
J
= 25
°
C
0.1
4.5V
0.01
0.1
20μs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.1
4.0
V DS = 100V
20μs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
V
DS
, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
V
GS
, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
10
TOP
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
3.0
I
D
= 1.4A
2.5
2.0
1
1.5
1.0
4.5V
0.5
0.1
1
10
20μs PULSE WIDTH
T
J
= 150
°
C
100
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
DS
, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
T
J
, Junction Temperature (
°
C)
Fig. 4 - Normalized On-Resistance vs. Temperature
3
DTL1N60/DTP1N60/DTU1N60
www.din-tek.jp
10000
C, Capacitance (pF)
1000
I
SD
, Reverse Drain Current (A)
f = 1MHz
V
GS
= 0V,
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
C
iss
100
T
J
= 150
°
C
1
C
oss
10
T
J
= 25
°
C
C
rss
1
1
10
100
1000
A
0.1
0.4
V
GS
= 0 V
0.6
0.8
1.0
1.2
V
DS
, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
V
SD
,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
I
D
= 1.4A
V
DS
= 480V
V
DS
= 300V
V
DS
= 120V
100
V
GS
, Gate-to-Source Voltage (V)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
16
I
D
, Drain Current (A)
10
10us
12
8
100us
1
1ms
4
0
0
2
4
6
FOR TEST CIRCUIT
SEE FIGURE 13
8
10
12
14
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
10ms
1000
10000
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
4
DTL1N60/DTP1N60/DTU1N60
www.din-tek.jp
1.6
V
GS
R
g
V
DS
R
D
D.U.T.
+
- V
DD
I
D
, Drain Current (A)
1.2
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
0.8
Fig. 10a - Switching Time Test Circuit
0.4
V
DS
90 %
0.0
25
50
75
100
125
150
T
C
, Case Temperature ( ° C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
10
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 10b - Switching Time Waveforms
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15 V
V
DS
t
p
V
DS
L
Driver
R
g
20 V
t
p
D.U.T
I
AS
0.01
Ω
+
A
- V
DD
I
AS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
5
京公网安备 11010802033920号
EEWORLD
