d. Maximum under steady state conditions is 125 °C/W.
1
www.din-tek.jp
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain
Current
a
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 4.5 V
V
GS
= 10 V, I
D
= 3.7 A
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 3.7 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 3.7 A, V
GS
= 0 V
0.85
12
5
6.5
5.5
T
C
= 25 °C
2.3
20
1.2
25
10
A
V
ns
nC
ns
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 4.1
I
D
3.7 A, V
GEN
= 10 V, R
g
= 1
V
DD
= 15 V, R
L
= 4.1
I
D
3.7 A, V
GEN
= 4.5 V, R
g
= 1
f = 1 MHz
0.4
V
DS
= 15 V, V
GS
= 10 V, I
D
= 4.7 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 4.7 A
8.8
4
0.9
1.1
2
0.29
0.4
1.9
0.75
0.1
0.15
3
0.75
4
0.58
0.8
3.8
1.5
0.2
0.3
6
1.5
µs
k
13.5
6
nC
V
GS
= 4.5 V, I
D
= 3.6 A
V
GS
= 2.5 V, I
D
= 1.5 A
V
DS
= 15 V, I
D
= 3.7 A
15
0.036
0.040
0.048
17
0.045
0.049
0.060
S
0.6
30
23
- 3.2
1.3
± 0.5
± 25
1
10
A
µA
V
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
DTS2012
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
40
1.E-01
1.E-02
I
GSS
- Gate Current (mA)
30
I
GSS
- Gate Current (A)
1.E-03
1.E-04
www.din-tek.jp
DTS2012
T
J
= 150
°C
1.E-05
1.E-06
1.E-07
1.E-08
1.E-09
T
J
= 25
°C
20
T
J
= 25
°C
10
0
0
3
6
9
12
15
18
1.E-10
0
3
6
9
12
15
18
V
GS
- Gate-to-Source Voltage (V)
V
GS
- Gate-Source Voltage (V)
Gate Current vs. Gate-to-Source Voltage
20
V
GS
= 5 V thru 3 V
V
GS
= 2.5 V
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
Gate Current vs. Gate-to-Source Voltage
12
V
GS
= 2 V
8
6
T
C
= 25
°C
4
T
C
= 125
°C
T
C
= - 55
°C
4
V
GS
= 1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
2
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.16
10
Transfer Characteristics
I
D
= 4.7 A
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- On-Resistance (Ω)
8
0.12
V
DS
= 15 V
V
GS
= 2.5 V
0.08
6
V
DS
= 24 V
V
DS
= 7.5 V
4
V
GS
= 4.5 V
0.04
V
GS
= 10 V
2
0
0
4
8
12
16
20
0
0
2
4
6
8
10
Q
g
- Total Gate Charge (nC)
I
D
- Drain Current (A)
On-Resistance vs. Drain Current
Gate Charge
3
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
1.6
1.5
1.4
R
DS(on)
- On-Resistance
(Normalized)
1.3
1.2
1.1
1.0
0.9
0.8
0.7
- 50
0.1
- 25
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
V
GS
= 10 V; I
D
= 3.7 A
V
GS
= 4.5 V; I
D
= 3.7 A
V
GS
= 2.5 V; I
D
= 1.5 A
I
S
- Source Current (A)
10
T
J
= 150
°C
100
www.din-tek.jp
DTS2012
T
J
= 25
°C
1
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
Normalized On-Resistance vs. Junction Temperature
0.10
I
D
= 3.7 A
R
DS(on)
- On-Resistance (Ω)
0.08
1.0
V
GS(th)
(V)
0.06
T
J
= 125
°C
0.9
1.2
1.1
Source-Drain Diode Forward Voltage
I
D
= 250 μA
0.8
0.7
0.6
0.04
T
J
= 25
°C
0.02
0
0.0
2.0
4.0
6.0
8.0
10.0
0.5
- 50
- 25
0
25
50
75
100
125
150
V
GS
- Gate-to-Source Voltage (V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
30
100
Threshold Voltage
Limited by R
DS(on)
*
25
10
I
D
- Drain Current (A)
100 μs
20
Power (W)
15
1
1 ms
10 ms
10
0.1
5
0.01
0.1
T
A
= 25
°C
Single Pulse
BVDSS Limited
100 ms
1s
10 s
DC
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
1
10
100
Single Pulse Power, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
4
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
8
www.din-tek.jp
DTS2012
3.0
2.5
I
D
- Drain Current (A)
Power Dissipation (W)
75
100
125
150
6
2.0
Package Limited
4
1.5
1.0
2
0.5
0
0
25
50
T
C
- Case Temperature (°C)
0.0
25
50
75
100
125
150
T
F
- Foot Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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