P-Channel 20 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
() at V
GS
= - 4.5 V
R
DS(on)
() at V
GS
= - 2.5 V
I
D
(A)
Configuration
TO-236
(SOT-23)
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DTS2301S
- 20
0.105
0.130
-3
Single
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• AEC-Q101 Qualified
d
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
S
G
1
3
D
G
S
2
Top View
DTS2301S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SOT-23
DTS2301S
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
a
Pulsed Drain Current
b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
SYMBOL
V
DS
V
GS
I
D
I
S
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
- 20
±8
-3
- 2.2
-3
- 15
-6
4
3
1
- 55 to + 175
mJ
W
°C
A
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width
300 μs, duty cycle
2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PCB Mount
c
SYMBOL
R
thJA
R
thJF
LIMIT
166
50
UNIT
°C/W
1
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SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
I
F
= - 1.6 A, V
GS
= 0
V
DD
= - 10 V, R
L
= 10
I
D
- 1 A, V
GEN
= - 4.5 V, R
g
= 1
f = 1 MHz
V
GS
= - 4.5 V
V
DS
= - 10 V, I
D
= - 2.8 A
V
GS
= 0 V
V
DS
= - 10 V, f = 1 MHz
-
-
-
-
-
-
5.5
-
-
-
-
-
-
340
80
55
5
0.7
1.3
10
15
14
30
9
-
- 0.8
425
100
70
8
-
-
14.5
22
21
45
15
-3
- 1.2
A
V
ns
nC
pF
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0, I
D
= - 250 μA
V
DS
= V
GS
, I
D
= - 250 μA
V
DS
= 0 V, V
GS
= ± 8 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= - 4.5 V
V
GS
= - 4.5 V
V
GS
= - 2.5 V
V
DS
= - 20 V
V
DS
= - 20 V, T
J
= 125 °C
V
DS
= - 20 V, T
J
= 175 °C
V
DS
5
V
I
D
= - 2.8 A
I
D
= - 2 A
- 20
- 0.45
-
-
-
-
-8
-
-
-
-
-
-
-
-
-
-
0.080
0.110
7
-
- 1.5
± 100
-1
- 50
- 150
-
0.105
0.130
-
A
S
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
DTS2301S
V
DS
= - 1.6 V, I
D
= - 2.8 A
Source-Drain Diode Ratings and Characteristics
b
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
10
T
C
= 25 °C
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DTS2301S
8
I
D
- Drain Current (A)
V
GS
= 10 V thru 2.5 V
I
D
- Drain Current (A)
8
T
C
= - 55 °C
T
C
= 125 °C
6
V
GS
= 2 V
6
4
V
GS
= 1.5 V
4
2
2
0
0
V
GS
= 1 V
3
4
2
1
V
DS
- Drain-to-Source Voltage (V)
5
0
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
5
Output Characteristics
0.5
T
C
= - 55 °C
g
fs
- Transconductance (S)
R
DS(on)
- On-Resistance (Ω)
Transfer Characteristics
10
8
T
C
= 25 °C
T
C
= 125 °C
4
0.4
6
0.3
0.2
V
GS
= 2.5 V
0.1
V
GS
= 4.5 V
2
0
0
1
2
3
I
D
- Drain Current (A)
4
5
0
0
2
4
6
8
10
I
D
- Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
600
4.5
4.0
V
GS
-
Gate-to-Source
Voltage (V)
500
C - Capacitance (pF)
I
D
= 2.8 A
3.5
V
DS
= 10 V
3.0
2.5
2.0
1.5
1.0
0.5
0.0
400
C
iss
300
200
C
oss
100
C
rss
0
0
5
10
15
V
DS
- Drain-to-Source Voltage (V)
20
0
1
2
3
Q
g
- Total
Gate
Charge (nC)
4
5
Capacitance
Gate Charge
3
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.0
R
DS(on)
- On-Resistance (Normalized)
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DTS2301S
100
I
D
= 2.8 A
1.7
I
S
-
Source
Current (A)
10
T
J
= 150 °C
1
T
J
= 25 °C
0.1
1.4
1.1
V
GS
= 4.5 V
0.8
V
GS
= 2.5 V
0.5
- 50
0.01
0.001
- 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
On-Resistance vs. Junction Temperature
1.0
0.5
0.4
R
DS(on)
- On-Resistance (Ω)
Source-Drain Diode Forward Voltage
0.8
V
GS(th)
Variance (V)
0.3
I
D
= 250 μA
0.2
I
D
= 5 mA
0.1
0
0.6
0.4
0.2
T
J
= 150 °C
T
J
= 25 °C
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
5
- 0.1
- 0.2
- 50
0.0
- 25
0
25
50
75 100
T
J
- Temperature (°C)
125
150
175
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
- 22
I
D
= 1 mA
- 23
V
DS
- Drain-to-Source Voltage (V)
- 24
- 25
- 26
- 27
- 50
- 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
4
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
I
DM
Limited
10
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DTS2301S
Limited by R
DS(on)
*
1 ms
I
D
- Drain Current (A)
1
10 ms
100 ms
1s
10 s, DC
0.1
T
C
= 25 °C
Single Pulse
0.01
0.01
BVDSS Limited
100
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (s)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJF
= 50 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
5
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